CY7C1470V25-250BZC Cypress Semiconductor Corp, CY7C1470V25-250BZC Datasheet

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CY7C1470V25-250BZC

Manufacturer Part Number
CY7C1470V25-250BZC
Description
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1470V25-250BZC

Density
72Mb
Access Time (max)
3ns
Sync/async
Synchronous
Architecture
SDR
Clock Freq (max)
250MHz
Operating Supply Voltage (typ)
2.5V
Address Bus
21b
Package Type
FBGA
Operating Temp Range
0C to 70C
Number Of Ports
4
Supply Current
450mA
Operating Supply Voltage (min)
2.375V
Operating Supply Voltage (max)
2.625V
Operating Temperature Classification
Commercial
Mounting
Surface Mount
Pin Count
165
Word Size
36b
Number Of Words
2M
Lead Free Status / RoHS Status
Not Compliant
Cypress Semiconductor Corporation
Document #: 38-05290 Rev. *I
Features
Logic Block Diagram-CY7C1470V25 (2M x 36)
• Pin-compatible and functionally equivalent to ZBT™
• Supports 250-MHz bus operations with zero wait states
• Internally self-timed output buffer control to eliminate
• Fully registered (inputs and outputs) for pipelined
• Byte Write capability
• Single 2.5V power supply
• 2.5V/1.8V I/O supply (V
• Fast clock-to-output times
• Clock Enable (CEN) pin to suspend operation
• Synchronous self-timed writes
• CY7C1470V25, CY7C1472V25 available in
• IEEE 1149.1 JTAG Boundary Scan compatible
• Burst capability—linear or interleaved burst order
• “ZZ” Sleep Mode option and Stop Clock option
— Available speed grades are 250, 200 and 167 MHz
the need to use asynchronous OE
operation
— 3.0 ns (for 250-MHz device)
JEDEC-standard lead-free 100-pin TQFP, lead-free and
non-lead-free 165-ball FBGA package. CY7C1474V25
available in lead-free and non-lead-free 209 ball FBGA
package
CEN
CLK
A0, A1, A
ADV/LD
MODE
BW
BW
BW
BW
C
WE
CE1
CE2
CE3
OE
ZZ
a
b
c
d
DDQ
)
WRITE ADDRESS
REGISTER 1
REGISTER 0
ADDRESS
Pipelined SRAM with NoBL™ Architecture
CONTROL
READ LOGIC
SLEEP
AND DATA COHERENCY
WRITE REGISTRY
CONTROL LOGIC
198 Champion Court
WRITE ADDRESS
ADV/LD
REGISTER 2
C
A1
A0
D1
D0
72-Mbit(2M x 36/4M x 18/1M x 72)
BURST
LOGIC
Q1
Q0
A0'
A1'
Functional Description
The CY7C1470V25/CY7C1472V25/CY7C1474V25 are 2.5V,
2M x 36/4M x 18/1M x 72 Synchronous pipelined burst SRAMs
with No Bus Latency™ (NoBL™) logic, respectively. They are
designed to support unlimited true back-to-back Read/Write
operations
CY7C1470V25/CY7C1472V25/CY7C1474V25 are equipped
with the advanced (NoBL) logic required to enable consec-
utive Read/Write operations with data being transferred on
every clock cycle. This feature dramatically improves the
throughput of data in systems that require frequent Write/Read
transitions. The CY7C1470V25/CY7C1472V25/CY7C1474V25
are pin-compatible and functionally equivalent to ZBT devices.
All synchronous inputs pass through input registers controlled
by the rising edge of the clock. All data outputs pass through
output registers controlled by the rising edge of the clock. The
clock input is qualified by the Clock Enable (CEN) signal,
which when deasserted suspends operation and extends the
previous clock cycle. Write operations are controlled by the
Byte Write Selects (BW
for CY7C1470V25 and BW
Write Enable (WE) input. All writes are conducted with on-chip
synchronous self-timed write circuitry.
Three synchronous Chip Enables (CE
asynchronous Output Enable (OE) provide for easy bank
selection and output tri-state control. In order to avoid bus
contention, the output drivers are synchronously tri-stated
during the data portion of a write sequence.
DRIVERS
WRITE
REGISTER 1
MEMORY
San Jose
ARRAY
INPUT
with
E
M
S
E
N
S
E
A
P
S
,
CA 95134-1709
a
–BW
E
no
REGISTER 0
a
INPUT
–BW
h
D
A
T
A
T
E
E
R
N
G
S
I
for CY7C1474V25, BW
Revised June 21, 2006
E
b
wait
for CY7C1472V25) and a
O
U
U
U
T
P
T
B
F
F
E
R
S
E
CY7C1470V25
CY7C1472V25
CY7C1474V25
1
, CE
DQs
DQP
DQP
DQP
DQP
states.
a
b
c
d
2
, CE
408-943-2600
3
) and an
a
–BW
The
d
[+] Feedback

Related parts for CY7C1470V25-250BZC

CY7C1470V25-250BZC Summary of contents

Page 1

... FBGA package • IEEE 1149.1 JTAG Boundary Scan compatible • Burst capability—linear or interleaved burst order • “ZZ” Sleep Mode option and Stop Clock option Logic Block Diagram-CY7C1470V25 (2M x 36) A0, A1, A REGISTER 0 MODE CLK ...

Page 2

... REGISTER A0' BURST D0 Q0 LOGIC ADV/LD C WRITE ADDRESS REGISTER 2 WRITE REGISTRY MEMORY AND DATA COHERENCY WRITE ARRAY CONTROL LOGIC DRIVERS INPUT REGISTER 1 READ LOGIC Sleep Control 250 MHz 200 MHz 3.0 3.0 450 450 120 120 CY7C1470V25 CY7C1472V25 CY7C1474V25 DQs DQP T ...

Page 3

... DQb DQa 18 63 DQa DQb DDQ 20 61 DDQ DQa DQb 22 59 DQa DQb 23 58 DQa DQPb 24 57 DQa DDQ 27 54 DDQ DQa DQa DQPa CY7C1470V25 CY7C1472V25 CY7C1474V25 DDQ DQPa 74 DQa 73 DQa DDQ DQa 69 DQa DQa 63 DQa DDQ DQa 59 DQa ...

Page 4

... DQ V DDQ DDQ DDQ DDQ N DQP DDQ P NC/144M MODE NC/576M NC/1G A CE2 DDQ DDQ DDQ DDQ DDQ DDQ DDQ DDQ DDQ N DQP DDQ P NC/144M MODE A Document #: 38-05290 Rev. *I CY7C1470V25 ( CEN CLK TDI A1 TDO A A0 TCK A TMS CY7C1472V25 ( CEN CLK ...

Page 5

... DDQ MODE TDI Pin Description controls DQ a and DQP , BW controls DQ and DQP and DQP BW controls DQ and DQP CY7C1470V25 CY7C1472V25 CY7C1474V25 DQb DQb 3 BWS DQb DQb b f BWS DQb DQb DQb DQb DQPf DQPb DDQ DDQ V DQf V DQf DQf DQf DDQ DDQ ...

Page 6

... The direction of the pins is [18:0] –DQ are placed in a tri-state condition. The outputs are automat controlled DQP is controlled controlled DQP is controlled DQP is controlled CY7C1470V25 CY7C1472V25 CY7C1474V25 . During [71:0] , DQP is controlled DQP is controlled Page [+] Feedback ...

Page 7

... The correct BW (BW CY7C1470V25 CY7C1472V25 CY7C1474V25 , CE 1 for CY7C1474V25, a,b,c,d,e,f,g,h for CY7C1470V25 and DQ /DQP a,b a,b for CY7C1474V25, a,b,c,d,e,f,g,h for CY7C1470V25 & DQ /DQP a,b a,b for CY7C1474V25, BW a,b,c,d for CY7C1472V25) signals. The a,b /DQP for CY7C1474V25, a,b,c,d,e,f,g,h for CY7C1470V25 and DQ /DQP a,b ...

Page 8

... CY7C1474V25, BW for CY7C1470V25 and BW a,b,c,d CY7C1472V25) inputs must be driven in each cycle of the burst write in order to write the correct bytes of data. Sleep Mode The ZZ input pin is an asynchronous input. Asserting ZZ places the SRAM in a power conservation “sleep” mode. Two clock cycles are required to enter into or exit from this “sleep” ...

Page 9

... Partial Write Cycle Description Function (CY7C1470V25) Read Write – No bytes written Write Byte a – (DQ and DQP ) a a Write Byte b – (DQ and DQP ) b b Write Bytes b, a Write Byte c – (DQ and DQP ) c c Write Bytes c, a Write Bytes c, b Write Bytes Write Byte d – (DQ ...

Page 10

... IEEE 1149.1 Serial Boundary Scan (JTAG) The CY7C1470V25/CY7C1472V25/CY7C1474V25 incorpo- rates a serial boundary scan test access port (TAP). This port operates in accordance with IEEE Standard 1149.1-1990 but does not have the set of functions required for full 1149.1 compliance. These functions from the IEEE specification are excluded because their inclusion places an added delay in the critical speed path of the SRAM ...

Page 11

... TAP controller’s capture set-up plus hold time (t plus portion of The SRAM clock input might not be captured correctly if there is no way in a design to stop (or slow) the clock during a SAMPLE/PRELOAD instruction. If this is an issue still CY7C1470V25 CY7C1472V25 CY7C1474V25 Unlike the SAMPLE/PRELOAD Page [+] Feedback ...

Page 12

... Reserved These instructions are not implemented but are reserved for future use. Do not use these instructions CYC TL t TMSS t TMSH t TDIS t TDIH t TDOX DON’T CARE UNDEFINED [9, 10] Over the Operating Range Description / ns CY7C1470V25 CY7C1472V25 CY7C1474V25 TDOV Min. Max. Unit MHz ...

Page 13

... I DDQ CY7C1472V25 CY7C1474V25 (2M x 36) (4M x 18) (1M x 72) 000 000 000 01011 01011 01011 001000 001000 001000 100100 010100 110100 00000110100 00000110100 1 1 CY7C1470V25 CY7C1472V25 CY7C1474V25 – 0.2 DDQ 0.9V 50Ω 50Ω 20pF O Min. Max. Unit 1.7 V 2.1 V 1.6 V 0.4 V 0 ...

Page 14

... Do Not Use: This instruction is reserved for future use. BYPASS 111 Places the bypass register between TDI and TDO. This operation does not affect SRAM opera- tions. Document #: 38-05290 Rev. *I Bit Size (x36) Bit Size (x18 – – Description CY7C1470V25 CY7C1472V25 CY7C1474V25 Bit Size (x72 – 110 Page [+] Feedback ...

Page 15

... L10 59 B8 K11 60 A7 165-Ball ID Bit # 165-Ball L10 P6 28 K10 R6 29 J10 R8 30 H11 P3 31 G11 P4 32 F11 P8 33 E11 P9 34 D11 P10 35 C11 R9 36 A11 R10 37 A9 R11 38 B9 M10 39 A10 CY7C1470V25 CY7C1472V25 CY7C1474V25 Bit # 165-Ball Bit # 165-Ball ID 40 B10 ...

Page 16

... J11 V5 72 J10 U5 73 H11 U6 74 H10 W7 75 G11 V7 76 G10 U7 77 F11 V8 78 F10 V9 79 E10 W11 80 E11 W10 81 D11 V11 82 D10 V10 83 C11 U11 84 C10 CY7C1470V25 CY7C1472V25 CY7C1474V25 Bit # 209-Ball ID 85 B11 86 B10 87 A11 88 A10 100 B3 101 C3 102 C4 103 ...

Page 17

... All speed grades DD ≥ V ≤ /2), undershoot: V (AC)> –2V (Pulse width less than t CYC IL (min.) within 200 ms. During this time V < V and CY7C1470V25 CY7C1472V25 CY7C1474V25 Ambient Temperature DDQ 0°C to +70°C 2.5V –5%/+5% 1. Min. Max. 2.375 2.625 2.375 V DD 1.7 1.9 2.0 1 ...

Page 18

... EIA/JESD51 1667Ω 2.5V V DDQ OUTPUT GND 1538Ω INCLUDING JIG AND (b) SCOPE KΩ 1.8V V DDQ OUTPUT 0 KΩ INCLUDING JIG AND (b) SCOPE CY7C1470V25 CY7C1472V25 CY7C1474V25 100 TQFP 165 FBGA 209 FBGA Max. Max. Max. Unit ...

Page 19

... V minimum initially, before a Read or Write operation can be DD and t is less than t to eliminate bus contention between SRAMs when sharing the same EOLZ CHZ CLZ CY7C1470V25 CY7C1472V25 CY7C1474V25 –200 –167 Min. Max. Min. Max. ...

Page 20

... DOH CLZ D(A1) D(A2) D(A2+1) Q(A3) t BURST READ READ BURST WRITE Q(A3) Q(A4) READ D(A2+1) Q(A4+1) DON’T CARE UNDEFINED is LOW. When CE is HIGH,CE is HIGH CY7C1470V25 CY7C1472V25 CY7C1474V25 OEV CHZ Q(A4) Q(A4+1) D(A5) Q(A6) OEHZ t DOH t OELZ WRITE READ WRITE ...

Page 21

... Device must be deselected when entering ZZ mode. See cycle description table for all possible signal conditions to deselect the device. 26. I/Os are in High-Z when exiting ZZ sleep mode. Document #: 38-05290 Rev D(A1) Q(A2) Q(A3) READ WRITE STALL Q(A3) D(A4) DON’T CARE High-Z DON’T CARE CY7C1470V25 CY7C1472V25 CY7C1474V25 CHZ D(A4) Q(A5) NOP READ DESELECT CONTINUE Q(A5) DESELECT UNDEFINED t ZZREC ...

Page 22

... CY7C1470V25-167AXC 51-85050 100-Pin Thin Quad Flat Pack ( 1.4 mm) Lead-Free CY7C1472V25-167AXC CY7C1470V25-167BZC 51-85165 165-ball Fine-Pitch Ball Grid Array ( 1.4mm) CY7C1472V25-167BZC CY7C1470V25-167BZXC 51-85165 165-ball Fine-Pitch Ball Grid Array ( 1.4mm) Lead-Free CY7C1472V25-167BZXC CY7C1474V25-167BGC 51-85167 209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm) CY7C1474V25-167BGXC CY7C1470V25-167AXI 51-85050 100-Pin Thin Quad Flat Pack ( ...

Page 23

... Ordering Code Diagram 250 CY7C1470V25-250AXC 51-85050 100-Pin Thin Quad Flat Pack ( 1.4 mm) Lead-Free CY7C1472V25-250AXC CY7C1470V25-250BZC 51-85165 165-ball Fine-Pitch Ball Grid Array ( 1.4 mm) CY7C1472V25-250BZC CY7C1470V25-250BZXC 51-85165 165-ball Fine-Pitch Ball Grid Array ( 1.4 mm) Lead-Free CY7C1472V25-250BZXC CY7C1474V25-250BGC 51-85167 209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm) ...

Page 24

... JEDEC STD REF MS-026 2. BODY LENGTH DIMENSION DOES NOT INCLUDE MOLD PROTRUSION/END FLASH MOLD PROTRUSION/END FLASH SHALL NOT EXCEED 0.0098 in (0.25 mm) PER SIDE BODY LENGTH DIMENSIONS ARE MAX PLASTIC BODY SIZE INCLUDING MOLD MISMATCH 3. DIMENSIONS IN MILLIMETERS A CY7C1470V25 CY7C1472V25 CY7C1474V25 1.40±0.05 12°±1° A ...

Page 25

... Package Diagrams (continued) 165-Ball FBGA ( 1.4 mm) (51-85165) TOP VIEW PIN 1 CORNER SEATING PLANE C Document #: 38-05290 Rev 0.15(4X) CY7C1470V25 CY7C1472V25 CY7C1474V25 PIN 1 CORNER BOTTOM VIEW Ø0. Ø0. Ø0.45±0.05(165X 1.00 5.00 10.00 B 15.00±0.10 51-85165-*A Page [+] Feedback ...

Page 26

... The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. CY7C1470V25 CY7C1472V25 ...

Page 27

... Document History Page Document Title: CY7C1470V25/CY7C1472V25/CY7C1474V25 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL™ Architecture Document Number: 38-05290 Orig. of REV. ECN No. Issue Date Change ** 114677 08/06/02 PKS *A 121519 01/27/03 CJM *B 223721 See ECN NJY *C 235012 See ECN RYQ *D 243572 See ECN ...

Page 28

... Document Title: CY7C1470V25/CY7C1472V25/CY7C1474V25 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL™ Architecture Document Number: 38-05290 *I 472335 See ECN VKN Document #: 38-05290 Rev. *I Corrected the typo in the pin configuration for 209-Ball FBGA pinout (Corrected the ball name for from V SS Added the Maximum Rating for Supply Voltage on V ...

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