TIM7785-60SL Toshiba, TIM7785-60SL Datasheet
TIM7785-60SL
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TIM7785-60SL Summary of contents
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... No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. MICROWAVE POWER GaAs FET TIM7785-60SL HIGH GAIN G1dB=6.0dB at 7.7GHz to 8.5GHz BROAD BAND INTERNALLY MATCHED FET ...
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... CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 ° C) Channel Temperature Storage Temperature PACKAGE OUTLINE (2-16G1B) HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. TIM7785-60SL SYMBOL UNIT ...
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... RF PERFORMANCE Output Power (Pout) vs. Frequency VDS=10V 49 IDS≅13.2A Pin=42.0dBm Output Power(Pout) vs. Input Power(Pin) 51 freq.=8.5GHz 50 V =10V DS I set≅9. TIM7785-60SL 7.7 8.1 8.3 7.9 Frequency(GHz) Pout ηadd 40 42 Pin(dBm ...
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... Power Dissipation(PT) vs. Case Temperature(Tc) 200 100 IM3 vs. Power Characteristics -10 V =10V DS I set≅9.5A DS freq.=8.5GHz -20 Δf=5MHz -30 -40 -50 - Pout(dBm) @Single carrier level TIM7785-60SL 80 120 Tc( ° 200 160 40 42 ...