M48T08Y-10MH1F STMicroelectronics, M48T08Y-10MH1F Datasheet - Page 18

IC TIMEKPR SRAM 64KBIT 5V 28SOIC

M48T08Y-10MH1F

Manufacturer Part Number
M48T08Y-10MH1F
Description
IC TIMEKPR SRAM 64KBIT 5V 28SOIC
Manufacturer
STMicroelectronics
Series
Timekeeper®r
Type
Clock/Calendar/NVSRAMr
Datasheet

Specifications of M48T08Y-10MH1F

Memory Size
64K (8K x 8)
Time Format
HH:MM:SS (24 hr)
Date Format
YY-MM-DD-dd
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
0°C ~ 70°C
Mounting Type
Surface Mount
Package / Case
28-SOIC, 28-SOH (8.48mm Width)
Bus Type
Parallel
User Ram
8KB
Operating Supply Voltage (typ)
5V
Package Type
SOH
Operating Supply Voltage (max)
5.5V
Operating Supply Voltage (min)
4.5V
Operating Temperature Classification
Commercial
Operating Temperature (max)
70C
Operating Temperature (min)
0C
Pin Count
28
Mounting
Surface Mount
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-4710-2

Available stocks

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Part Number:
M48T08Y-10MH1F
Manufacturer:
ST
0
Clock operations
3.5
18/31
V
I
fluctuations, resulting in spikes on the V
capacitors are used to store energy which stabilizes the V
bypass capacitors will be released as low going spikes are generated or energy will be
absorbed when overshoots occur. A ceramic bypass capacitor value of 0.1 µF (as shown in
Figure
In addition to transients that are caused by normal SRAM operation, power cycling can
generate negative voltage spikes on V
one volt. These negative spikes can cause data corruption in the SRAM while in battery
backup mode. To protect from these voltage spikes, it is recommended to connect a
Schottky diode from V
1N5817 is recommended for through hole and MBRS120T3 is recommended for surface
mount.
Figure 10. Supply voltage protection
CC
CC
transients, including those produced by output switching, can produce voltage
noise and negative going transients
10) is recommended in order to provide the needed filtering.
CC
to V
SS
V CC
Doc ID 2411 Rev 10
(cathode connected to V
0.1µF
CC
CC
that drive it to values below V
bus. These transients can be reduced if
V CC
V SS
DEVICE
CC
CC
, anode to V
bus. The energy stored in the
M48T08, M48T08Y, M48T18
SS
SS
by as much as
). Schottky diode
AI02169

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