M48T37Y-70MH1E STMicroelectronics, M48T37Y-70MH1E Datasheet - Page 23

IC TIMEKPR NVRAM 256KBIT5V 44SOH

M48T37Y-70MH1E

Manufacturer Part Number
M48T37Y-70MH1E
Description
IC TIMEKPR NVRAM 256KBIT5V 44SOH
Manufacturer
STMicroelectronics
Series
Timekeeper®r
Type
Clock/Calendar/NVSRAMr
Datasheets

Specifications of M48T37Y-70MH1E

Memory Size
256K (32K x 8)
Time Format
HH:MM:SS (24 hr)
Date Format
YY-MM-DD-dd
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
0°C ~ 70°C
Mounting Type
Surface Mount
Package / Case
44-SOH
Bus Type
Parallel
User Ram
32KB
Operating Supply Voltage (typ)
5V
Package Type
SOH
Operating Supply Voltage (max)
5.5V
Operating Supply Voltage (min)
4.5V
Operating Temperature Classification
Commercial
Operating Temperature (max)
70C
Operating Temperature (min)
0C
Pin Count
44
Mounting
Surface Mount
Memory Configuration
32K X 8
Nvram Features
RTC
Interface Type
Parallel
Access Time
70ns
Supply Voltage Range
4.5V To 5.5V
Memory Case Style
SOIC
No. Of Pins
44
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-2854-5
M48T37Y-70MH1

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M48T37Y-70MH1E
Manufacturer:
ST
Quantity:
936
Part Number:
M48T37Y-70MH1E
Manufacturer:
ST
Quantity:
9 331
Part Number:
M48T37Y-70MH1E
Manufacturer:
ST
0
Figure 14. Power Down/Up Mode AC Waveforms
Table 12. Power Down/Up AC Characteristics
Note: 1. Valid for Ambient Operating Temperature: T
Table 13. Power Down/Up Trip Points DC Characteristics
Note: All voltages referenced to V
Symbol
t
V
V
DR
Symbol
PFD
t
SO
REC
t
2. V
3. V
4. t
1. Valid for Ambient Operating Temperature: T
2. Using larger M4T32-BR12SH6 SNAPHAT top (recommended for Industrial Temperature Range - Grade 6 device).
3. At 25°C, V
t
(3)
FB
t
F
t
RB
(2)
R
es V
(3)
REC
(4)
PFD
PFD
V CC
V PFD (max)
V PFD (min)
V SO
RST
INPUTS
OUTPUTS
Power-fail Deselect Voltage
Battery Back-up Switchover Voltage
Expected Data Retention Time
PFD
(min) = 20ms for Industrial Temperature Range - Grade 6 device.
(max) to V
(min) to V
(min).
V
V
V
V
V
CC
PFD
PFD
PFD
SS
PFD
= 0V.
SS
to V
PFD
(min) to V
(max) to V
(min) to V
(max) to RST High
fall time of less than t
(min) fall time of less than tF may result in deselection/write protection not occurring until 200µs after V
PFD
VALID
VALID
SS
(min) V
.
PFD
SS
PFD
tF
Parameter
V
(max) V
Parameter
CC
CC
(min) V
Fall Time
Rise Time
FB
CC
CC
may cause corruption of RAM data.
(1)
A
A
tFB
= 0 to 70°C or –40 to 85°C; V
= 0 to 70°C or –40 to 85°C; V
(1)
Rise Time
Fall Time
M48T37Y
M48T37V
M48T37Y
M48T37V
Grade 1
Grade 6
DON'T CARE
tDR
HIGH-Z
CC
CC
10
Min
4.2
2.7
5
= 4.5 to 5.5V or 3.0 to 3.6V (except where noted).
= 4.5 to 5.5V or 3.0 to 3.6V (except where noted).
(2)
Min
300
10
10
40
1
tRB
V
PFD
V
Typ
4.4
2.9
–100mV
BAT
7
M48T37Y, M48T37V
Max
200
tR
tREC
VALID
VALID
Max
4.5
3.0
AI03078
Unit
ms
µs
µs
µs
µs
YEARS
YEARS
Unit
CC
V
V
V
V
23/29
pass-

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