M48T59Y-70MH1F STMicroelectronics, M48T59Y-70MH1F Datasheet - Page 19
![IC TIMEKPR SRAM 64KBIT 5V 28SOIC](/photos/6/56/65690/stmicroelectronics-28-soic_sml.jpg)
M48T59Y-70MH1F
Manufacturer Part Number
M48T59Y-70MH1F
Description
IC TIMEKPR SRAM 64KBIT 5V 28SOIC
Manufacturer
STMicroelectronics
Series
Timekeeper®r
Type
Clock/Calendar/NVSRAMr
Datasheet
1.M48T59Y-70MH1E.pdf
(32 pages)
Specifications of M48T59Y-70MH1F
Memory Size
64K (8K x 8)
Time Format
HH:MM:SS (24 hr)
Date Format
YY-MM-DD-dd
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
0°C ~ 70°C
Mounting Type
Surface Mount
Package / Case
28-SOIC, 28-SOH (8.48mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-4723-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
3.10
Note:
3.11
3.12
Century bit
Bit D5 and D4 of Clock Register 1FFCh contain the CENTURY ENABLE Bit (CEB) and the
CENTURY Bit (CB). Setting CEB to a '1' will cause CB to toggle, either from a '0' to '1' or
from '1' to '0' at the turn of the century (depending upon its initial state). If CEB is set to a '0,'
CB will not toggle.
The WRITE Bit must be set in order to write to the CENTURY Bit.
Initial power-on defaults
Upon application of power to the device, the following register bits are set to a '0' state:
WDS; BMB0-BMB4; RB0-RB1; AFE; ABE; W; R; FT (see
Table 7.
1. WDS, BMB0-BMB4, RBO, RB1.
2. State of other control bits undefined.
3. State of other control bits remains unchanged.
4. Assuming these bits set to '1' prior to power-down.
V
I
fluctuations, resulting in spikes on the V
capacitors are used to store energy which stabilizes the V
bypass capacitors will be released as low going spikes are generated or energy will be
absorbed when overshoots occur. A ceramic bypass capacitor value of 0.1 µF (as shown in
Figure 12 on page
In addition to transients that are caused by normal SRAM operation, power cycling can
generate negative voltage spikes on V
one volt. These negative spikes can cause data corruption in the SRAM while in battery
backup mode. To protect from these voltage spikes, it is recommended to connect a
schottky diode from V
1N5817 is recommended for through hole and MBRS120T3 is recommended for surface
mount.
Initial power-up
(Battery attach for SNAPHAT)
Subsequent power-up / RESET
Power-down
CC
CC
transients, including those produced by output switching, can produce voltage
noise and negative going transients
(4)
Condition
Default values
20) is recommended in order to provide the needed filtering.
CC
to V
(2)
(3)
SS
(cathode connected to V
W
0
0
0
CC
CC
that drive it to values below V
bus. These transients can be reduced if
R
0
0
0
FT
0
0
0
CC
CC
Table
, anode to V
bus. The energy stored in the
AFE
0
0
1
7).
ABE
SS
SS
0
0
1
by as much as
). Schottky diode
Watchdog
register
0
0
0
19/32
(1)