MCP4132-103E/SN Microchip Technology, MCP4132-103E/SN Datasheet - Page 3
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MCP4132-103E/SN
Manufacturer Part Number
MCP4132-103E/SN
Description
IC RHEO DGTL SNGL 10K SPI 8SOIC
Manufacturer
Microchip Technology
Datasheet
1.MCP4131-502EP.pdf
(88 pages)
Specifications of MCP4132-103E/SN
Taps
129
Resistance (ohms)
10K
Number Of Circuits
1
Temperature Coefficient
150 ppm/°C Typical
Memory Type
Volatile
Interface
SPI Serial
Voltage - Supply
1.8 V ~ 5.5 V
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Resistance In Ohms
10K
End To End Resistance
10kohm
Track Taper
Linear
No. Of Steps
129
Resistance Tolerance
± 20%
Supply Voltage Range
1.8V To 5.5V
Control Interface
Serial, SPI
No. Of Pots
Single
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MCP4132-103E/SN
Manufacturer:
Microchip
Quantity:
796
1.0
Absolute Maximum Ratings †
Voltage on V
Voltage on CS, SCK, SDI, SDI/SDO, and
SHDN with respect to V
Voltage on all other pins (PxA, PxW, PxB, and
SDO) with respect to V
Input clamp current, I
(V
Output clamp current, I
(V
Maximum output current sunk by any Output pin
Maximum output current sourced by any Output pin
Maximum current out of V
Maximum current into V
Maximum current into P
Storage temperature ....................................-65°C to +150°C
Ambient temperature with power applied
Total power dissipation (Note 1) ................................400 mW
Soldering temperature of leads (10 seconds) ............. +300°C
ESD protection on all pins .................................. ≥ 4 kV (HBM),
Maximum Junction Temperature (T
© 2008 Microchip Technology Inc.
......................................................................................25 mA
......................................................................................25 mA
.......................................................................... ≥ 300V (MM)
.....................................................................-40°C to +125°C
I
O
Note 1: Power dissipation is calculated as follows:
< 0, V
< 0 or V
I
ELECTRICAL
CHARACTERISTICS
> V
O
DD
DD
> V
with respect to V
, V
DD
I
) ..................................................±20 mA
> V
Pdis = V
IK
SS ............................
OK
SS ......................................
PP ON
DD
X
A, P
SS
pin ....................................100 mA
pin .................................100 mA
X
DD
HV pins) ......................±20 mA
W & P
SS
x {I
J
............... -0.6V to +7.0V
) ......................... +150°C
X
DD
B pins ............±2.5 mA
- ∑ I
-0.3V to V
OH
-0.6V to 12.5V
} + ∑ {(V
DD
+ 0.3V
MCP413X/415X/423X/425X
DD
-V
OH
) x I
OH
† Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
} + ∑(V
O
l x I
OL
)
DS22060B-page 3