SST39WF1601-70-4C-Y1QE Microchip Technology, SST39WF1601-70-4C-Y1QE Datasheet - Page 20

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SST39WF1601-70-4C-Y1QE

Manufacturer Part Number
SST39WF1601-70-4C-Y1QE
Description
1.65V To 1.95V 16Mbit Multi-Purpose Flash 48 WFBGA 4x6x0.8 Mm TRAY
Manufacturer
Microchip Technology
Series
-r

Specifications of SST39WF1601-70-4C-Y1QE

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
16M (1M x 16)
Speed
70ns
Interface
Parallel
Voltage - Supply
1.65 V ~ 1.95 V
Operating Temperature
0°C ~ 70°C
Package / Case
48-WFBGA
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SST39WF1601-70-4C-Y1QE
Manufacturer:
Microchip Technology
Quantity:
10 000
A Microchip Technology Company
©2011 Silicon Storage Technology, Inc.
Figure 8: Toggle Bits Timing Diagram
Figure 9: WE# Controlled Chip-Erase Timing Diagram
ADDRESS A
ADDRESS A
Note: This device also supports CE# controlled Chip-Erase operation.
DQ
6
and DQ
DQ
The WE# and CE# signals are interchangeable as long as minimum timings are met. (See Table 17.)
WP# must be held in proper logic state (V
X can be V
WE#
OE#
WE#
CE#
CE#
OE#
19-0
15-0
19-0
2
IL
or V
5555
IH,
T
XXAA
SW0
but no other value.
WP
2AAA
T
OEH
XX55
SW1
T
SIX-BYTE CODE FOR CHIP-ERASE
CE
16 Mbit Multi-Purpose Flash Plus
5555
20
XX80
SW2
IH
T
) 1 µs prior to and 1µs after the command sequence.
OE
5555
SST39WF1601 / SST39WF1602
XXAA
SW3
2AAA
XX55
SW4
5555
XX10
SW5
WITH SAME OUTPUTS
TWO READ CYCLES
T
SCE
DS-25014A
T
OES
Data Sheet
1297 F07.1
1297 F08.1
04/11

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