TIM7179-4SL Toshiba, TIM7179-4SL Datasheet - Page 5
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TIM7179-4SL
Manufacturer Part Number
TIM7179-4SL
Description
Manufacturer
Toshiba
Datasheet
1.TIM7179-4SL.pdf
(8 pages)
Specifications of TIM7179-4SL
Configuration
Single
Gate-source Voltage (max)
5V
Drain-source Volt (max)
15V
Operating Temperature Classification
Military
Pin Count
3
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
TIM7179-4SL
Manufacturer:
UMS
Quantity:
1 400
Part Number:
TIM7179-4SL
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
FEATURES
RF PERFORMANCE SPECIFICATIONS ( Ta= 25 ° C )
Output Power at 1dB Gain
Compression Point
Power Gain at 1dB Gain
Compression Point
Drain Current
Gain Flatness
Power Added Efficiency
3rd Order Intermodulation
Distortion
Drain Current
Channel Temperature Rise
ELECTRICAL CHARACTERISTICS ( Ta= 25 ° C )
Transconductance
Pinch-off Voltage
Saturated Drain Current
Gate-Source Breakdown
Voltage
Thermal Resistance
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
before proceeding with design of equipment incorporating this product.
P1dB=36.5dBm at 7.1GHz to 7.9GHz
G1dB= 9.0dB at 7.1GHz to 7.9GHz
Recommended gate resistance(Rg) : Rg= 150 Ω ( MAX.)
HIGH POWER
HIGH GAIN
CHARACTERISTICS
CHARACTERISTICS
SYMBOL
SYMBOL
R
V
V
G
P
ΔTch
I
I
η
I
th(c-c)
GSoff
IM
DSS
DS1
DS2
gm
ΔG
GSO
1dB
1dB
add
3
V
I
V
I
V
V
I
Channel to Case
DS
DS
GS
DS
DS
DS
GS
(Single Carrier Level)
(VDS X IDS + Pin – P1dB)
f
= 1.5A
= 15mA
= -50 μ A
Two-Tone Test
= 7.1 to 7.9GHz
CONDITIONS
= 3V
=
=
CONDITIONS
= 0V
Po= 25.5dBm
BROAD BAND INTERNALLY MATCHED FET
HERMETICALLY SEALED PACKAGE
V
3V
3V
DS
X Rth(c-c)
MICROWAVE POWER GaAs FET
= 10
TIM7179-4UL
V
UNIT
UNIT
° C/W
dBm
dBc
mS
dB
dB
° C
%
A
A
V
A
V
MIN.
MIN.
35.5
-1.0
-44
8.0
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-5
Rev. Jun. 2006
TYP. MAX.
TYP. MAX.
36.5
-2.5
900
-47
9.0
1.1
1.1
2.6
4.5
35
⎯
⎯
⎯
±0.6
-4.0
1.3
1.3
6.0
80
⎯
⎯
⎯
⎯
⎯
⎯
⎯