ED DDR3 1G PCH9000 Samsung Semiconductor, ED DDR3 1G PCH9000 Datasheet - Page 30

• Manufacturer Part Number: ED DDR3 1G PCH9000
• Manufacturer: Samsung Semiconductor
• Type: DDR3 SDRAMr

Specifications of ED DDR3 1G PCH9000

• Organization: 64Mx16
• Density: 1Gb
• Address Bus: 16b
• Access Time (max): 20ns
• Maximum Clock Rate: 1.333GHz
• Operating Supply Voltage (typ): 1.5V
• Package Type: FBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.575V
• Operating Supply Voltage (min): 1.425V
• Supply Current: 160mA
• Pin Count: 96
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

K4B1G04(08/16)46E
Figure 20. Correlation from simulated Channel IO Power to actual Channel IO Power supported by IDDQ Measurement.
[Note: DIMM level Output test load condition may be different from above]
Application specific
Channel IO Power
memory channel
RESET
CK/CK
CKE
CS
RAS, CAS, WE
A, BA
ODT
ZQ
environment
Figure 19. Measurement Setup and Test Load for IDD and IDDQ (optional) Measurements
Channel
IO Power
Simulation
Number
V
V
DD
SS
I
DD
Correction
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TDQS, TDQS
V
V
DQS, DQS
DDQ
SSQ
DQ, DM,
I
DDQ
(optional)
Simulation
IDDQ
R
TT
= 25 Ohm
IDDQ
Test Load
V
DDQ
/2
1Gb DDR3 SDRAM
Correlation
Rev. 1.0 February 2009
Measurement
IDDQ