ED DDR3 1G PCH9000 Samsung Semiconductor, ED DDR3 1G PCH9000 Datasheet - Page 53

• Manufacturer Part Number: ED DDR3 1G PCH9000
• Manufacturer: Samsung Semiconductor
• Type: DDR3 SDRAMr

Specifications of ED DDR3 1G PCH9000

• Organization: 64Mx16
• Density: 1Gb
• Address Bus: 16b
• Access Time (max): 20ns
• Maximum Clock Rate: 1.333GHz
• Operating Supply Voltage (typ): 1.5V
• Package Type: FBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.575V
• Operating Supply Voltage (min): 1.425V
• Supply Current: 160mA
• Pin Count: 96
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

K4B1G04(08/16)46E
Figure 21 - Illustration of nominal slew rate and tVAC for setup time tDS (for DQ with respect to strobe) and tIS
Note :Clock and Strobe are drawn on a different time scale.
(for ADD/CMD with respect to clock).
V
V
V
V
Setup Slew Rate
V
V
IL
IL
Falling Signal
REF
DDQ
IH
IH
(DC) max
(AC) max
(DC) min
(AC) min
(DC)
DQS
DQS
CK
CK
V
SS
V
region
REF
=
Delta TF
to ac
V
REF
(DC) - V
Delta TF
nominal slew
tDS
tIS
IL
rate
tVAC
(AC)max
Page 53 of 61
tDH
tIH
Setup Slew Rate
Rising Signal
Delta TR
nominal
slew rate
tDS
tIS
tVAC
=
V
IH
(AC)min - V
tDH
tIH
V
Delta TR
REF
region
1Gb DDR3 SDRAM
to ac
REF
Rev. 1.0 February 2009
(DC)