MT48H8M32LFB5-8 IT:G TR Micron Technology Inc, MT48H8M32LFB5-8 IT:G TR Datasheet - Page 73
![](/photos/31/34/313421/mfg557-90-vfbga_sml.jpg)
MT48H8M32LFB5-8 IT:G TR
Manufacturer Part Number
MT48H8M32LFB5-8 IT:G TR
Description
Manufacturer
Micron Technology Inc
Type
Mobile SDRAMr
Datasheet
1.MT48H8M32LFB5-8_ITG_TR.pdf
(86 pages)
Specifications of MT48H8M32LFB5-8 IT:G TR
Organization
8Mx32
Density
256Mb
Address Bus
14b
Access Time (max)
9/7ns
Maximum Clock Rate
125MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.7V
Supply Current
115mA
Pin Count
90
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / Rohs Status
Compliant
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Command
Figure 44: WRITE Without Auto Precharge
PDF: 09005aef834c13d2
256mb_mobile_sdram_y36n.pdf - Rev. I 11/09 EN
BA0, BA1
Address
DQM
CKE
A10
CLK
DQ
t CMS
t CKS
t AS
t AS
t AS
Bank
ACTIVE
Row
Row
T0
t CKH
t CMH
t AH
t AH
t AH
t RCD
t RAS
t RC
t CK
Note:
T1
NOP
Disable auto precharge
1. For this example, BL = 4 and the WRITE burst is followed by a manual PRECHARGE.
t CMS
t CL
Column m
t DS
WRITE
Bank
T2
D
IN
t CMH
t DH
t CH
t DS
T3
NOP
D
IN
t DH
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
t DS
T4
NOP
D
IN
t DH
73
t DS
NOP
T5
D
IN
t DH
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t WR
NOP
T6
PRECHARGE
Single bank
All banks
PRECHARGE Operation
Bank
T7
©2008 Micron Technology, Inc. All rights reserved.
t RP
NOP
T8
ACTIVE
Row
Row
Bank
T9
Don’t Care
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