MT47H64M16HR-3 IT:HTR Micron Technology Inc, MT47H64M16HR-3 IT:HTR Datasheet - Page 120
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MT47H64M16HR-3 IT:HTR
Manufacturer Part Number
MT47H64M16HR-3 IT:HTR
Description
Manufacturer
Micron Technology Inc
Type
DDR2 SDRAMr
Specifications of MT47H64M16HR-3 IT:HTR
Organization
64Mx16
Density
1Gb
Address Bus
16b
Access Time (max)
450ps
Maximum Clock Rate
667MHz
Operating Supply Voltage (typ)
1.8V
Package Type
FBGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
135mA
Pin Count
84
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / Rohs Status
Compliant
Power-Down Mode
PDF: 09005aef821ae8bf
1GbDDR2.pdf – Rev. W 7/11 EN
DDR2 SDRAM supports multiple power-down modes that allow significant power sav-
ings over normal operating modes. CKE is used to enter and exit different power-down
modes. Power-down entry and exit timings are shown in Figure 69 (page 121). Detailed
power-down entry conditions are shown in Figure 70 (page 123)–Figure 77 (page 126).
Table 44 (page 122) is the CKE Truth Table.
DDR2 SDRAM requires CKE to be registered HIGH (active) at all times that an access is
in progress—from the issuing of a READ or WRITE command until completion of the
burst. Thus, a clock suspend is not supported. For READs, a burst completion is defined
when the read postamble is satisfied; for WRITEs, a burst completion is defined when
the write postamble and
READ command) are satisfied, as shown in Figure 72 (page 124) and Figure 73
(page 124) on Figure 73 (page 124). The number of clock cycles required to meet
is either two or
Power-down mode (see Figure 69 (page 121)) is entered when CKE is registered low co-
incident with an NOP or DESELECT command. CKE is not allowed to go LOW during a
mode register or extended mode register command time, or while a READ or WRITE op-
eration is in progress. If power-down occurs when all banks are idle, this mode is refer-
red to as precharge power-down. If power-down occurs when there is a row active in
any bank, this mode is referred to as active power-down. Entering power-down deacti-
vates the input and output buffers, excluding CK, CK#, ODT, and CKE. For maximum
power savings, the DLL is frozen during precharge power-down. Exiting active power-
down requires the device to be at the same voltage and frequency as when it entered
power-down. Exiting precharge power-down requires the device to be at the same volt-
age as when it entered power-down; however, the clock frequency is allowed to change
(see Precharge Power-Down Clock Frequency Change (page 127)).
The maximum duration for either active or precharge power-down is limited by the re-
fresh requirements of the device
entry and exit is limited by the
tained while in power-down mode: CKE LOW, a stable clock signal, and stable power
supply signals at the inputs of the DDR2 SDRAM. All other input signals are “Don’t
Care” except ODT. Detailed ODT timing diagrams for different power-down modes are
shown in Figure 82 (page 132)–Figure 87 (page 136).
The power-down state is synchronously exited when CKE is registered HIGH (in con-
junction with a NOP or DESELECT command), as shown in Figure 69 (page 121).
t
WTR/
t
CK, whichever is greater.
t
WR (WRITE-to-PRECHARGE command) or
120
t
CKE (MIN) parameter. The following must be main-
t
RFC (MAX). The minimum duration for power-down
Micron Technology, Inc. reserves the right to change products or specifications without notice.
1Gb: x4, x8, x16 DDR2 SDRAM
Power-Down Mode
2007 Micron Technology, Inc. All rights reserved.
t
WTR (WRITE-to-
t
WTR