EP4CE40F29C7N Altera, EP4CE40F29C7N Datasheet - Page 6
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EP4CE40F29C7N
Manufacturer Part Number
EP4CE40F29C7N
Description
IC CYCLONE IV E FPGA 40K 780FBGA
Manufacturer
Altera
Series
CYCLONE® IV Er
Datasheets
1.EP4CGX15BN11C8N.pdf
(44 pages)
2.EP4CGX15BN11C8N.pdf
(14 pages)
3.EP4CGX15BN11C8N.pdf
(478 pages)
4.EP4CGX15BN11C8N.pdf
(10 pages)
Specifications of EP4CE40F29C7N
Number Of Logic Elements/cells
39600
Number Of Labs/clbs
2475
Total Ram Bits
1134000
Number Of I /o
532
Voltage - Supply
1.15 V ~ 1.25 V
Mounting Type
Surface Mount
Operating Temperature
0°C ~ 85°C
Package / Case
780-FBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Number Of Gates
-
Other names
544-2685
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
EP4CE40F29C7N
Manufacturer:
ALTERA
Quantity:
852
Part Number:
EP4CE40F29C7N
Manufacturer:
ALTERA/阿尔特拉
Quantity:
20 000
1–6
Table 1–4. Recommended Operating Conditions for Cyclone IV GX Devices (Part 2 of 2)—Preliminary
ESD Performance
Table 1–5. ESD for Cyclone IV Devices GPIOs and HSSI I/Os
Cyclone IV Device Handbook, Volume 3
V
V
V
T
t
I
Notes to
(1) All VCCA pins must be powered to 2.5 V (even when PLLs are not used) and must be powered up and powered down at the same time.
(2) You must connect V
(3) Power supplies must rise monotonically.
(4) V
(5) You must set V
(6) The CLKIN pins in I/O Banks 3B and 8B can support single-ended I/O standard.
(7) The POR time for Standard POR ranges between 50 and 200 ms. V
(8) The POR time for Fast POR ranges between 3 and 9 ms. V
V
V
Note to
(1) This value is applicable only to Cyclone IV GX devices.
RAMP
Diode
J
CCL_GXB
I
O
ESDHBM
ESDCDM
Symbol
I/O Banks 3 and 9 only support V
Bank 8 must be powered up to 1.5, 1.8, 2.5, 3.0, and 3.3 V.
only support a nominal voltage level of 2.5 V for LVDS input function because they are dedicated for HSSI refclk.
operating range within 50 ms.
range within 3 ms.
CCIO
Table
Symbol
Table
for all I/O banks must be powered up during device operation. Configurations pins are powered up by V
1–5:
1–4:
Transceiver PMA and auxiliary power
supply
DC input voltage
DC output voltage
Operating junction temperature
Power supply ramp time
Magnitude of DC current across
PCI-clamp diode when enabled
CC_CLKIN
CCD_PLL
This section lists the electrostatic discharge (ESD) voltages using the human body
model (HBM) and charged device model (CDM) for Cyclone IV devices general
purpose I/Os (GPIOs) and high-speed serial interface (HSSI) I/Os.
ESD for Cyclone IV devices GPIOs and HSSI I/Os.
to 2.5 V if you use CLKIN as a high-speed serial interface (HSSI) refclk. V
ESD voltage using the HBM (GPIOs)
ESD using the HBM (HSSI I/Os)
ESD using the CDM (GPIOs)
ESD using the CDM (HSSI I/Os)
to V
CCINT
Parameter
CCIO
through a decoupling capacitor and ferrite bead.
of 1.5, 1.8, 2.5, 3.0, and 3.3 V. For fast passive parallel (FPP) configuration mode, the V
Parameter
CCINT
, V
(1)
(1)
CCA
Standard power
CCINT
, and V
For commercial use
For industrial use
, V
Fast POR
CCA
Conditions
CCIO
(POR)
, and V
of I/O Banks 3, 8, and 9 must reach the recommended operating
—
—
—
—
(7)
CCIO
- on reset
(8)
of I/O Banks 3, 8, and 9 must reach the recommended
Passing Voltage
± 2000
± 1000
± 500
± 250
50 µs
50 µs
Chapter 1: Cyclone IV Device Datasheet
1.16
–0.5
Min
–40
CC_CLKIN
—
0
0
© December 2010 Altera Corporation
CCIO
located at I/O Banks 3B and 8B
of I/O Banks 3, 8, and 9 where
Typ
1.2
—
—
—
—
—
—
—
Table 1–6
Operating Conditions
50 ms
3 ms
1.24
Max
V
100
3.6
CCIO
85
10
CCIO
Unit
level of I/O
V
V
V
V
lists the
Unit
mA
—
—
°C
°C
V
V
V