S-8261AAHMD-G2H-T2 Seiko Instruments, S-8261AAHMD-G2H-T2 Datasheet - Page 16

• Manufacturer Part Number: S-8261AAHMD-G2H-T2
• Description: Battery Management 4.28V Single Cell
• Manufacturer: Seiko Instruments

Specifications of S-8261AAHMD-G2H-T2

• Product: Li-Ion Protection
• Battery Type: Li-Ion, Li-Pol
• Output Voltage: 8 V
• Operating Supply Voltage: 1.5 V to 8 V
• Supply Current: 7 uA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Package / Case: SOT-23-6
• Mounting Style: SMD/SMT
• Uvlo Start Threshold: 1 V
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

16
BATTERY PROTECTION IC FOR SINGLE-CELL PACK
S-8261 Series
(6) Test Condition 6, Test Circuit 3
(7) Test Condition 7, Test Circuit 4
(8) Test Condition 8, Test Circuit 4
(9) Test Condition 9, Test Circuit 5
(10) Test Condition 10, Test Circuit 5
(11) Test Condition 11, Test Circuit 2 (Product with 0 V battery charge function)
(12) Test Condition 12, Test Circuit 2 (Product with 0 V battery charge inhibition function)
(Internal Resistance between VM and VDD, Internal Resistance between VM and VSS)
(CO Pin Resistance “H”, CO Pin Resistance “L”)
(DO Pin Resistance “H”, DO Pin Resistance “L”)
(Overcharge Detection Delay Time, Overdischarge Detection Delay Time)
(Overcurrent 1 Detection Delay Time, Overcurrent 2 Detection Delay Time, Load Short-circuiting Detection
(0 V Battery Charge Starting Charger Voltage)
(0 V Battery Charge Inhibition Battery Voltage)
The resistance between VM and VDD (R
of V1 = 1.8 V and V2 = 0 V.
The resistance between VM and VSS (R
of V1 = 3.5 V and V2 = 1.0 V.
The CO pin resistance “H” (R
= 3.0 V.
The CO pin resistance “L” (R
0.5 V.
The DO pin resistance “H” (R
= 3.0 V.
The DO pin resistance “L” (R
0.5 V.
The overcharge detection delay time (t
momentarily increases (within 10 µs) from the overcharge detection voltage (V
voltage (V
The overdischarge detection delay time (t
V1 momentarily decreases (within 10 µs) from the overdischarge detection voltage (V
detection voltage (V
Delay Time, Abnormal Charge Current Detection Delay Time)
The overcurrent 1 detection delay time (t
increases (within 10 µs) from 0 V to 0.35 V under the set condition of V1 = 3.5 V and V2=0 V.
The overcurrent 2 detection delay time (t
increases (within 10 µs) from 0 V to 0.7 V under the set condition of V1 = 3.5 V and V2 = 0 V.
The load short-circuiting detection delay time (t
momentarily increases (within 10 µs) from 0 V to 1.6 V under the set condition of V1 = 3.5 V and V2 = 0 V.
The abnormal charge current detection delay time is the time needed for V
momentarily decreases (within 10 µs) from 0 V to −1.1 V under the set condition of V1 = 3.5 V and V2 = 0 V. The
abnormal charge current detection delay time has the same value as the overcharge detection delay time.
The 0 V battery charge starting charger voltage (V
goes “H” (V
V.
The 0 V battery charge inhibition battery voltage (V
goes “H” (V
V2 = −4 V.
CU
VM
VM
) + 0.2 V under the set condition of V2 = 0 V.
+ 0.1 V or higher) when the voltage V2 is gradually decreased from the starting condition of V1 = V2 = 0
+ 0.1 V or higher) when the voltage V1 is gradually increased from the starting condition of V1 = 0 V and
DL
) − 0.2 V under the set condition of V2 = 0 V.
COL
DOL
COH
DOH
) is the resistance the CO pin under the set condition of V1 = 4.5 V, V2 = 0 V and V3 =
) is the resistance the DO pin under the set condition of V1 = 1.8 V, V2 = 0 V and V4 =
) is the resistance the CO pin under the set condition of V1 = 3.5 V, V2 = 0 V and V3
) is the resistance the DO pin under the set condition of V1 = 3.5 V, V2 = 0 V and V4
CU
) is the time needed for V
VMD
VMS
DL
IOV1
IOV2
Seiko Instruments Inc.
) is the time needed for V
) is the internal resistance between VM and VSS under the set conditions
) is the internal resistance between VM and VDD under the set conditions
) is the time needed for V
) is the time needed for V
SHORT
0CHA
0INH
) is defined as the voltage between VDD and VSS at which V
) is the time needed for V
) is defined as the voltage between VDD and VM at which V
CO
to change from “H” to “L” just after the voltage V1
DO
to change from “H” to “L” just after the voltage
DO
DO
CO
to go “L” after the voltage V2 momentarily
to go “L” after the voltage V2 momentarily
to go from “H” to “L” after the voltage V2
CU
) − 0.2 V to the overcharge detection
DO
DL
to go “L” after the voltage V2
) +0.2 V to the overdischarge
Rev.4.4
_00
CO
CO