NTE2379 NTE Electronics, Inc., NTE2379 Datasheet - Page 2

• Manufacturer Part Number: NTE2379
• Description: MOSFET; N-Ch; VDSS 600V; RDS(ON) 1.2 Ohms; ID 6.2A; TO-220; PD 125W; VGS +/-20V; Qg 60nC
• Manufacturer: NTE Electronics, Inc.

Specifications of NTE2379

• Channel Type: N-Channel
• Current, Drain: 6.2 A
• Fall Time: 20 ns
• Gate Charge, Total: 60 nC
• Operating And Storage Temperature: -55 to +150 °C
• Package Type: TO-220
• Polarization: N-Channel
• Power Dissipation: 125 W
• Resistance, Drain To Source On: 1.2 Ohms
• Resistance, Thermal, Junction To Case: 1 °C⁄W
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Thermal Resistance, Junction To Ambient: 62 °C⁄W
• Time, Rise: 18 ns
• Time, Turn-off Delay: 55 ns
• Time, Turn-on Delay: 32 ns
• Transconductance, Forward: 4.7 Mhos
• Voltage, Breakdown, Drain To Source: 600 V
• Voltage, Diode Forward: 1.5 V
• Voltage, Forward, Diode: 1.5 V
• Voltage, Gate To Source: ±20 V

Electrical Characteristics: (T
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 4. Pulse Test: Pulse Width
Drain–Source Breakdown Voltage
Gate Threshold Voltage
Gate–Source Leakage Forward
Gate–Source Leakage Reverse
Drain–Source Leakage Current
Static Drain–Source ON Resist-
ance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain (“Miller”) Charge
Internal Drain Inductance
Internal Source Inductance
Source–Drain Diode Ratings and Characteristics
Continuous Source Current
Pulse Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn–On Time
Parameter
Symbol
R
J
BV
V
t
t
I
I
I
C
DS(on)
C
V
GS(th)
C
Q
d(on)
d(off)
Q
= +25 C unless otherwise specified)
GSS
GSS
I
DSS
Q
g
Q
L
L
t
SM
I
t
on
oss
t
t
SD
DSS
iss
rss
S
rr
fs
gs
gd
D
r
f
S
rr
g
300 s, Duty Cycle
V
V
V
V
V
V
V
V
V
V
R
V
Between lead, 6mm (.250 in) from package
and center of die contact
(Body Diode)
(Body Diode) Note 1
T
T
Note 4
Intrinsic turn–on time is neglegible (turn–on is dominated by L
J
J
GS
DS
GS
GS
DS
DS
GS
DS
GS
DD
GS
D
= +25 C, I
= +25 C, I
= 47 , Note 4
= 480V, V
= V
= 600V, V
= 10V, I
= 0V, I
= 20V
= –20V
= 10V, I
= 0V, V
= 300V
100V, I
GS
, I
D
,
DS
D
Test Conditions
D
D
I
= 250 A
S
F
D
D
= 6.2A, V
GS
= 3.7A, Note 4
GS
= 250 A
= 6.2A, di/dt = 100A/ s,
= 6.2A, V
= 25V, f = 1MHz
= 3.7A, Note 4
= 6.2A, R
= 0, T
= 0
2%.
DS
C
GS
= +150 C
G
= 360V
= 9.1 ,
= 0V, Note 4
Min
600
2.0
4.7
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
1300
Typ
160
450
4.5
7.5
3.8
30
32
18
55
20
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–100
Max
100
100
500
940
4.0
8.3
6.2
1.5
7.9
1.2
60
30
25
–
–
–
–
–
–
–
–
–
–
–
S
+ L
mhos
Unit
nA
nA
nC
nC
nC
nH
nH
pF
pF
pF
ns
ns
ns
ns
ns
V
V
A
A
V
A
A
C
D
)