NTE2379 NTE Electronics, Inc., NTE2379 Datasheet - Page 3

• Manufacturer Part Number: NTE2379
• Description: MOSFET; N-Ch; VDSS 600V; RDS(ON) 1.2 Ohms; ID 6.2A; TO-220; PD 125W; VGS +/-20V; Qg 60nC
• Manufacturer: NTE Electronics, Inc.

Specifications of NTE2379

• Channel Type: N-Channel
• Current, Drain: 6.2 A
• Fall Time: 20 ns
• Gate Charge, Total: 60 nC
• Operating And Storage Temperature: -55 to +150 °C
• Package Type: TO-220
• Polarization: N-Channel
• Power Dissipation: 125 W
• Resistance, Drain To Source On: 1.2 Ohms
• Resistance, Thermal, Junction To Case: 1 °C⁄W
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Thermal Resistance, Junction To Ambient: 62 °C⁄W
• Time, Rise: 18 ns
• Time, Turn-off Delay: 55 ns
• Time, Turn-on Delay: 32 ns
• Transconductance, Forward: 4.7 Mhos
• Voltage, Breakdown, Drain To Source: 600 V
• Voltage, Diode Forward: 1.5 V
• Voltage, Forward, Diode: 1.5 V
• Voltage, Gate To Source: ±20 V

.070 (1.78) Max
.147 (3.75)
Dia Max
.100 (2.54)
Gate
.420 (10.67)
Max
.250 (6.35)
Max
Source
Drain/Tab
(12.7)
(12.7)
.110 (2.79)
.500
.500
Max
Min