NTE159-10 NTE Electronics, Inc., NTE159-10 Datasheet - Page 2

• Manufacturer Part Number: NTE159-10
• Description: Transistor; PNP; Silicon; 80 V; 80 V; 5 V; 1 A; 625 mW; -55 to 150 degC; 200 d
• Manufacturer: NTE Electronics, Inc.

Specifications of NTE159-10

• Complement To: NPN
• Current, Collector Cutoff: 50 nA (Max.)
• Current, Continuous Collector: 1 A
• Current, Gain: 40 – 200 @ VCE == 5V, IC == 0.5A
• Material Type: Silicon
• Power Dissipation: 625 mW
• Resistance, Thermal, Junction To Case: 83.3 °C⁄W
• Temperature Range, Junction, Operating: -55 to 150 °C
• Thermal Resistance, Junction To Ambient: 200 °C⁄W
• Transistor Polarity: PNP
• Voltage, Breakdown, Collector To Emitter: 80 V (Min.)
• Voltage, Collector To Base: 80 V
• Voltage, Collector To Emitter: 80 V
• Voltage, Emitter To Base: 5 V
• Voltage, Saturation, Collector To Emitter: 1.5 V (Max.) @ IC == 3A, IB == 0.3A

Electrical Characteristics (Cont’d): (T
Note 2. Pulse Test: Pulse Width
ON Characteristics
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Base–Emitter ON Voltage
Small–Signal Characteristics
Current Gain–Bandwidth Product
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small–Signal Current Gain
Output Admittance
Noise Figure
Switching Characteristics
Turn–On Time
Turn–Off Time
Parameter
Symbol
V
V
V
300 s, Duty Cycle
CE(sat)
BE(sat)
BE(on)
h
C
Ci
h
h
NF
h
h
t
t
f
on
off
FE
oe
T
ob
re
fe
ie
b
A
= +25 C unless otherwise specified)
V
V
V
V
V
I
I
I
I
I
I
V
V
I
I
I
I
I
f = 1kHz
V
I
V
I
C
C
C
C
C
C
C
C
C
C
C
C
B1
CE
CE
CE
CE
CE
CB
CB
CC
CC
= 150mA, I
= 500mA, I
= 150mA, I
= 500mA, I
= 500mA, V
= 50mA, V
= 10mA, V
= 10mA, V
= 10mA, V
= 10mA, V
= 100 A, V
= 500mA, I
= I
= 10V, I
= 10V, I
= 10V, I
= 10V, I
= 10V, I
= 10V, I
= 10V, I
= 30V, V
= 30V, I
B2
= 50mA
Test Conditions
C
C
C
C
C
E
E
C
CE
CE
CE
CE
CE
BE(off)
B
B
B
B
B1
CE
= 0, f = 100kHz
= 0, f = 100kHz
= 0.1mA
= 1mA
= 10mA
= 100mA
= 500mA
= 500mA,
CE
= 15mA, Note 2
= 50mA, Note 2
= 15mA, Note 2
= 50mA, Note 2
2%.
= 10V, f = 100MHz
= 10V, f = 1kHz
= 10V, f = 1kHz
= 10V, f = 1kHz
= 10V, f = 1kHz
= 50mA
= 10V, R
= 500mV
= 3.8V,
S
= 1k ,
Min
100
25
40
50
40
30
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Typ
550
100
200
100
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Max
0.15
250
500
100
400
110
0.5
0.9
1.1
1.1
30
–
–
–
–
–
–
–
–
3
x 10
MHz
Unit
mhos
pF
pF
k
dB
ns
ns
V
V
V
V
V
–6