NTE5569 NTE Electronics, Inc., NTE5569 Datasheet - Page 2

• Manufacturer Part Number: NTE5569
• Description: Silicon Controlled Rectifier; Standard; 1200 V; 50 A; 80 A; 0.35 K/W; 50 mA
• Manufacturer: NTE Electronics, Inc.

Specifications of NTE5569

• Current Squared Time Rating: 5.1
• Current, Forward: 50 A
• Current, Gate Trigger: 50 mA
• Current, On-state, Average, Maximum: 50 A
• Current, On-state, Rms, Maximum: 80 A
• Current, Reverse: 15 mA
• Current, Surge: 1200 A
• Package Type: Standard
• Primary Type: SCR
• Resistance, Thermal, Junction To Case: 0.35 K/W
• Speed, Switching: Standard
• Temperature, Junction, Maximum: +125 °C
• Temperature, Operating: -40 to +125 °C
• Temperature, Operating, Maximum: 125 °C
• Temperature, Operating, Minimum: -40 °C
• Voltage, Forward: 1200 V
• Voltage, Gate, Maximum: 2.5 V
• Voltage, Reverse: 1200 V
• Voltage, Reverse, Peak, Maximum: 1200 V
• Voltage, Threshold: 0.94 V (low Level)
• Lead Free Status / Rohs Status: RoHS Compliant part

Maximum I
Low Level Value of Threshold Voltage (16.7% x
High Level Value of Threshold Voltage ( x I
Low Level Value of On–State Slope Resistance (16.7% x
High Level Value of On–State Slope Resistance ( x I
Maximum On–State Voltage (I
Maximum Holding Current (T
Latching Current (Anode Supply 6V, Resistive Load), I
Maximum Rate of Rise of Turned–On Current, di/dt
Typical Delay Time, t
(T
Typical Turn–Off Time, t
(T
Maximum Critical Rate of Rise of Off–State Voltage, dv/dt
Maximum Peak Gate Power (t
Maximum Average Gate Power, P
Maximum Peak Positive Gate Current, I
Maximum Peak Positive Gate Voltage, +V
Maximum Peak Negative Gate Voltage, –V
DC Gate Current Required to Trigger (6V Anode–to–Cathode Applied), I
DC Gate Voltage Required to Trigger (6V Anode–to–Cathode Applied, T
DC Gate Current Not to Trigger (Rated V
DC Gate Voltage Not to Trigger (Rated V
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance
Mounting Torque (Non–Lubricated Threads), T
Note 1. Units may be broken over non–repetitively in the off–state direction without damage, if di/dt
Note 2. For voltage pulses with t
C
C
= +25 C, V
= +125 C, I
NTE5567, NTE5568, NTE5569
NTE5571
NTE5567, NTE5568, NTE5569
NTE5571
NTE5567, NTE5568, NTE5569
NTE5571
NTE5567, NTE5568, NTE5569
NTE5571
NTE5567, NTE5568, NTE5569
NTE5571
NTE5567, NTE5568, NTE5569
NTE5571
(V
(Linear to 100% rated V
(Linear to 67% rated V
Junction–to–Case (DC Operation), R
Case–to–Heatsink (Mounting Surface Smooth, Flat, and Greased), R
does not exceed 20A/ s.
DM
NTE5567, NTE5568
NTE5569, NTE5571
2
= Rated V
t for Fusing (t = 0.1 to 10ms, No Voltage Reapplied), I
DM
TM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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= Rated V
= 50A, Reapplied dv/dt = 20V s, dir/dt = –10A/ s, V
d
DRM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
q
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
, Gate Pulse = 20V, 15 , t
J
DRM
= +25 C, Anode Supply 22V, Resistive Load, Initial I
DRM
pk
p
DRM
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
, DC Resistive Circuit, Gate Pulse = 10V, 15
= 157A, T
p
)
5ms), P
GM
)
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5ms.
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GM
DRM
DRM
G(AV)
GM
J
J
GM
thJC
T(AV)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C), V
Anode–to–Cathode Applied), I
Anode–to–Cathode Applied), V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
< I < 20 x x I
x I
p
T(AV)
= 6 s, t
T(AV)
L
TM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
< I <
< I < 20 x x I
J
x I
r
= 0.1 s ax., I
T(AV)
T(AV)
x I
2
< I <
T(AV)
25 – 30 (2.8 – 3.4) lbf–in (Nm)
), V
R
t
= 50V)
), V
T(TO)2
GT
J
T(AV)
= +25 C), V
TM
x I
T(TO)1
. . . . . . . . . . . . . .
thCS
GD
Source, t
GD
T(AV)
= (2x Rated di/dt) A)
T
), V
= 2A), I
. . . . . . . . . .
. . . . . . . . . .
. . . . . . .
), r
T(TO)2
–40 to +125 C
–40 to +125 C
t1
p
GT
101.8KA
H
= 20 s)
72.1KA
.
. . .
0.35K/W
0.25K/W
200A/ s
100A/ s
200V/ s
500V/ s
4.08m
4.78m
3.34m
3.97m
200mA
400mA
5.0mA
110 s
0.94V
1.02V
1.08V
1.17V
1.60V
1.78V
50mA
0.9 s
2.5W
10W
2.5A
2.5V
0.2V
20V
10V
2
2
s
s