NTE5556 NTE Electronics, Inc., NTE5556 Datasheet - Page 2

• Manufacturer Part Number: NTE5556
• Description: SCR; TO-220; 600V; 300A Itsm; 1.5; +125; 1.5V
• Manufacturer: NTE Electronics, Inc.

Specifications of NTE5556

• Current, Forward: 25 A
• Current, Reverse: 2 mA
• Current, Surge: 300 A
• Package Type: TO-220
• Primary Type: SCR
• Resistance, Thermal, Junction To Case: 1.5 °C/W
• Temperature, Junction, Maximum: +125 °C
• Temperature, Operating: -40 to +125 °C
• Voltage, Forward: 600 mV
• Voltage, Reverse: 600 V

Electrical Characteristics: (T
Note 2. Pulse Test: Pulse Width
Peak Forward Blocking Voltage, (T
Peak Forward or Reverse Blocking Current,
Forward “ON” Voltage, (I
Gate Trigger Current (Continuous DC),
Gate Trigger Voltage (Continuous DC)
Gate Non–Trigger Voltage
Holding Current
Turn–On Time
Turn–Off Time (V
Critical Rate of Rise of Off–State Voltage
NTE5550
NTE5552
NTE5554
NTE5556
NTE5558
(Rated V
(Anode Voltage = 12Vdc, R
(Anode Voltage = 12Vdc, R
(Anode Voltage = Rated V
(Anode Voltage = 12Vdc, T
(I
(I
(I
(Gate Open, Rated V
TM
TM
TM
= 25A, I
=25A, I
=25A, I
DRM
R
R
GT
or V
= 25A)
= 25A, T
DRM
= 50mAdc)
RRM
= rated voltage)
Parameter
TM
DRM
)
J
= +125 C)
= 50A, Note 2)
DRM
, Exponential Waveform)
.070 (1.78) Max
C
.147 (3.75)
C
Dia Max
L
L
= +25 C unless otherwise noted.)
= 100 )
= 100 , T
, R
= –40 C)
Cathode
.100 (2.54)
J
300 s, Duty Cycle
L
= +125 C)
=100 , T
C
T
T
T
T
.420 (10.67)
= –40 C)
J
J
C
C
J
Max
= +25 C
= +125 C
= +25 C
= –40 C
= +125 C)
.250 (6.35)
Max
2%.
Gate
Anode/Tab
(12.7)
(12.7)
.500
Max
.500
.110 (2.79)
Min
I
DRM
Symbol
V
dv/dt
V
V
V
I
DRM
t
GT
I
t
, I
GD
TM
GT
gt
H
q
RRM
Min
200
400
600
800
0.2
50
–
–
–
–
–
–
–
–
–
–
–
Typ Max Unit
1.5
25
35
15
35
50
–
–
–
–
–
–
–
–
–
1
–
1.8
1.5
10
40
75
40
–
–
–
–
–
2
–
2
–
–
–
V/ s
mA
mA
mA
V
V
V
V
A
s
s