SI7336ADP-T1-E3/BKN Siliconix / Vishay, SI7336ADP-T1-E3/BKN Datasheet
SI7336ADP-T1-E3/BKN
Specifications of SI7336ADP-T1-E3/BKN
Related parts for SI7336ADP-T1-E3/BKN
SI7336ADP-T1-E3/BKN Summary of contents
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Dual N-Channel 40 V (D-S) MOSFET PRODUCT SUMMARY V (V) R (Ω) DS DS(on) 0.042 0.047 4 PowerPAK 1212 ...
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Si7222DN Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter a, b Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 94 °C/W. SPECIFICATIONS °C, unless otherwise ...
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SPECIFICATIONS °C, unless otherwise noted J Parameter Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current a Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time ...
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Si7222DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted thru Drain-to-Source Voltage (V) DS Output Characteristics 0.050 0.047 0.044 0.041 V = ...
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.1 0.00 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.4 0.2 0.0 - 0.2 - 0.4 - 0.6 - ...
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Si7222DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Case Temperature (°C) C Power, Junction-to-Case * The power dissipation P is based dissipation limit ...
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 -4 ...
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All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...