SI7336ADP-T1-E3/BKN Siliconix / Vishay, SI7336ADP-T1-E3/BKN Datasheet - Page 6

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SI7336ADP-T1-E3/BKN

Manufacturer Part Number
SI7336ADP-T1-E3/BKN
Description
N-CHANNEL 30-V (D-S) MOSFET
Manufacturer
Siliconix / Vishay
Datasheet

Specifications of SI7336ADP-T1-E3/BKN

Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device
Si7222DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.vishay.com
6
25
20
15
10
5
0
0
25
D
Power, Junction-to-Case
T
C
is based on T
- Case Temperature (°C)
50
75
J(max)
100
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
55
44
33
22
11
0
0
125
25
150
Package Limited
T
C
Current Derating*
50
- Case Temperature (°C)
75
100
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
125
25
Power, Junction-to-Ambient
150
T
C
- Case Temperature (°C)
50
75
S-83052-Rev. B, 29-Dec-08
Document Number: 73439
100
125
150

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