MCH3306-TL-E Sanyo Semiconductor, MCH3306-TL-E Datasheet

MCH3306-TL-E

Manufacturer Part Number

MCH3306-TL-E

Description

MOSFET, P-CH, -20V, -2A, 0.11OHM@4V, MCPH3

Manufacturer

Sanyo Semiconductor

Datasheet

1.MCH3306-TL-E.pdf (4 pages)

Specifications of MCH3306-TL-E

Lead Free Status / Rohs Status

RoHS Compliant part Electrostatic Device

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Ordering number : ENN6900

Features

Specifications

Absolute Maximum Ratings at Ta=25 C

Electrical Characteristics at Ta=25 C

Marking : JF

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

•

Low ON-resistance.

Ultrahigh-speed switching.

1.8V drive.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

SANYO Electric Co.,Ltd. Semiconductor Company

V (BR)DSS

R DS (on)1

R DS (on)2

R DS (on)3

V GS (off)

Symbol

V GSS

V DSS

I GSS

I DSS

Tstg

I DP

Tch

P D

yfs

I D

Ultrahigh-Speed Switching Applications

PW 10 s, duty cycle 1%

Mounted on a ceramic board (900mm

I D =--1mA, V GS =0

V DS =- -20V, V GS =0

V GS = 8V, V DS =0

V DS =- -10V, I D =--1mA

V DS =- -10V, I D =- -1A

I D =--1A, V GS =- -4V

I D =--0.5A, V GS =- -2.5V

I D =--0.1A, V GS =- -1.8V

MCH3306

Conditions

Package Dimensions

unit : mm

2167

Conditions

0.3

0.65

2.0

0.8mm)

[MCH3306]

min

P-Channel Silicon MOSFET

- -0.3

--20

2.1

12201 TS IM TA-3149

0.15

Ratings

typ

Ratings

1 : Gate

2 : Source

3 : Drain

SANYO : MCPH3

140

180

110

MCH3306

3.0

--55 to +150

Continued on next page.

max

150

--1.0

- -20

145

200

260

--10

--2

--8

No.6900-1/4

Unit

Related parts for MCH3306-TL-E

MCH3306-TL-E Summary of contents

Page 1

... Tch Tstg Symbol Conditions V (BR)DSS I D =--1mA DSS -20V GSS 8V (off -10V =--1mA yfs -10V - (on =--1A - (on =--0.5A -2. (on =--0.1A -1.8V P-Channel Silicon MOSFET MCH3306 [MCH3306] 0. 0.65 2 Gate 2 : Source 3 : Drain SANYO : MCPH3 Ratings - - 0.8mm) 150 --55 to +150 Ratings min typ max --20 -- ...

Page 2

... See specified Test Circuit t d (off) See specified Test Circuit t f See specified Test Circuit =--10V =--10V -2A Qgs V DS =--10V =--10V -2A Qgd V DS =--10V =--10V - =--2A --10V -- = OUT MCH3306 S --4.0 --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 IT02753 400 Ta=25 C ...

Page 3

... Drain Current -- --10V -- --2A --8 --7 --6 --5 --4 --3 --2 -- Total Gate Charge 1.2 1.0 0.8 0.6 0.4 0 100 Ambient Temperature MCH3306 -- --10V --1 --0 --0. --0.2 --1.0 IT02757 1000 --10V -- 100 IT02759 -- --1 --0 Ta=25 C Single pulse 2 Mounted on a ceramic board(900mm --0 ...

Page 4

... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2001. Specifications and information herein are subject to change without notice. MCH3306 PS No.6900-4/4 ...

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