S29GL512S10DHI020 Spansion Inc., S29GL512S10DHI020 Datasheet - Page 26

• Manufacturer Part Number: S29GL512S10DHI020
• Description: IC 512 MBIT, 3V, 100NS, 64-BALL FBGA, PAGE MODE
• Manufacturer: Spansion Inc.

Specifications of S29GL512S10DHI020

• Lead Free Status / Rohs Status: Supplier Unconfirmed

26
5.2.1
5.2.2
Program Granularity
Incremental Programming
 A program operation may be suspended to allow reading of another location (not in the Line being
 No other program or erase operation may be started during a suspended program operation - program or
 After an intervening program operation or read access is complete the suspended erase or program
 Program and Erase operations may be interrupted as often as necessary but in order for a program or
 When an Embedded Algorithm (EA) is complete, the EAC returns to the operation state and address space
The system can determine the status of a program or erase operation by reading the Status Register or using
Data Polling Status. Refer to
Polling Status on page 40
Any commands written to the device during the Embedded Program Algorithm are ignored except the
Program Suspend, and Status Read command.
Any commands written to the device during the Embedded Erase Algorithm are ignored except Erase
Suspend and Status Read command.
A hardware reset immediately terminates any in progress program / erase operation and returns to read
mode after t
state, to ensure data integrity.
For performance and reliability reasons reading and programming is internally done on full 32 byte Pages.
Error Detection and Correction (EDC) is provided on each Page by adding an Error Correction Code (ECC) to
each Page when it is first programmed. The ECC is not visible to the user.
I
Algorithm) operation.
The S29GL-S supports two methods of programming, Word or Write Buffer Programming. Each Page can be
programmed by either method. Pages programmed by different methods may be mixed within a Line.
Word programming examines the data word supplied by the command and programs 0’s in the addressed
memory array word to match the 0’s in the command data word.
Write Buffer Programming examines the write buffer and programs 0’s in the addressed memory array Page
to match the 0’s in the write buffer. The write buffer does not need to be completely filled with data. It is
allowed to program as little as a single bit, several bits, a single word, a few words, a Page, multiple Pages, or
the entire buffer as one programming operation. Use of the write buffer method reduces host system
overhead in writing program commands and reduces memory device internal overhead in programming
operations to make Write Buffer Programming more efficient and thus faster than programming individual
words with the Word Programming command.
The same word location may be programmed more than once, by either the Word or Write Buffer
Programming methods, to incrementally change 1’s to 0’s.
CC3
programmed).
erase commands will be ignored during a suspended program operation.
operation may be resumed.
erase operation to progress to completion there must be some periods of time between resume and the
next suspend commands greater than or equal to t
on page
from which the EA was started (Erase Suspend or EAC Standby).
in
DC Characteristics on page 73
47.
RPH
time. The terminated operation should be reinitiated once the device has returned to the idle
D a t a
for more information.
Status Register on page 38
S h e e t
GL-S MirrorBit
represents the active current specification for a write (Embedded
( A d v a n c e
®
Family
PRS
or t
for information on these status bits. Refer to
ERS
I n f o r m a t i o n )
in
S29GL_128S_01GS_00_01 February 11, 2011
Embedded Algorithm Performance Table
Data