STM32L152C8U6 STMicroelectronics, STM32L152C8U6 Datasheet - Page 86
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STM32L152C8U6
Manufacturer Part Number
STM32L152C8U6
Description
Microcontrollers (MCU) 32-Bit Arm Cortex M3 64kb LCD Ultralow
Manufacturer
STMicroelectronics
Series
STM32r
Datasheet
1.STM32L152-EVAL.pdf
(107 pages)
Specifications of STM32L152C8U6
Core
ARM Cortex M3
Core Processor
ARM® Cortex-M3™
Core Size
32-Bit
Speed
32MHz
Connectivity
I²C, IrDA, LIN, SPI, UART/USART, USB
Peripherals
Brown-out Detect/Reset, DMA, I²S, LCD, POR, PWM, WDT
Number Of I /o
37
Program Memory Size
64KB (64K x 8)
Program Memory Type
FLASH
Eeprom Size
4K x 8
Ram Size
10K x 8
Voltage - Supply (vcc/vdd)
1.65 V ~ 3.6 V
Data Converters
A/D 16x12b, D/A 2x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
48-UFQFN Exposed Pad
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STM32L152C8U6
Manufacturer:
STM
Quantity:
200
Company:
Part Number:
STM32L152C8U6
Manufacturer:
STMicroelectronics
Quantity:
10 000
Electrical characteristics
86/107
Table 50.
1. ADC DC accuracy values are measured after internal calibration.
2. ADC accuracy vs. negative injection current: injecting negative current on any of the standard (non-robust)
3. Based on characterization, not tested in production.
Symbol
SINAD
SINAD
SINAD
ENOB
ENOB
ENOB
SNR
THD
SNR
THD
SNR
THD
analog input pins should be avoided as this significantly reduces the accuracy of the conversion being
performed on another analog input. It is recommended to add a Schottky diode (pin to ground) to standard
analog pins which may potentially inject negative current.
Any positive injection current within the limits specified for I
affect the ADC accuracy.
EO
EG
ED
EO
EG
ED
EO
EG
ED
ET
EL
ET
EL
ET
EL
Total unadjusted error
Offset error
Gain error
Differential linearity error
Integral linearity error
Effective number of bits
Signal-to-noise and
distorsion ratio
Signal-to-noise ratio
Total harmonic distorsion
Total unadjusted error
Offset error
Gain error
Differential linearity error
Integral linearity error
Effective number of bits
Signal-to-noise and
distorsion ratio
Signal-to-noise ratio
Total harmonic distorsion
Total unadjusted error
Offset error
Gain error
Differential linearity error
Integral linearity error
Effective number of bits
Signal-to-noise and
distorsion ratio
Signal-to-noise ratio
Total harmonic distorsion
ADC accuracy
Parameter
(1)(2)
Doc ID 17659 Rev 4
2.4 V V
2.4 V V
f
T
2.4 V V
V
f
T
1 kHz F
2.4 V V
1.8 V V
f
T
1.8 V V
1.8 V V
f
T
ADC
ADC
ADC
ADC
A
A
A
A
DDA
= -40 to 105 C
= -40 to 105 C
= -40 to 105 C
= -40 to 105 C
= 16 MHz, R
= 16 MHz, R
= 16 MHz, R
= 16 MHz, R
=
Test conditions
V
REF+
DDA
REF+
DDA
DDA
REF+
DDA
REF+
input
3.6 V
3.6 V
3.6 V
2.4 V
INJ(PIN)
100 kHz
3.6 V
2.4 V
2.4 V
AIN
AIN
AIN
AIN
and I
= 50
= 50
= 50
= 50
STM32L151xx, STM32L152xx
INJ(PIN)
±TBD
±TBD
±TBD
±TBD
±TBD
±TBD
±TBD
±TBD
in
Typ
-75
1.5
1.7
1.5
1.5
10
62
62
Section 6.3.11
2
1
1
4
2
4
1
2
1
1
1
Max
±TBD
±TBD
±TBD
±TBD
±TBD
±TBD
±TBD
±TBD
±TBD
±TBD
±TBD
±TBD
3.5
6.5
1.5
1.5
4
2
2
3
4
6
2
3
3
2
2
(3)
does not
Unit
LSB
LSB
LSB
bits
bits
bits
dB
dB
dB