MCIMX536AVV8C Freescale Semiconductor, MCIMX536AVV8C Datasheet - Page 29

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MCIMX536AVV8C

Manufacturer Part Number
MCIMX536AVV8C
Description
IC, 32-BIT MPU, 800 MHz, 529-BGA
Manufacturer
Freescale Semiconductor
Series
ARM Cortex-A8r
Datasheets

Specifications of MCIMX536AVV8C

Core Size
32bit
Program Memory Size
288KB
Cpu Speed
800MHz
Digital Ic Case Style
BGA
No. Of Pins
529
Supply Voltage Range
0.8V To 1.15V
Lead Free Status / Rohs Status
Supplier Unconfirmed

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1
2
3
4
4.3.2
The LPDDR2 I/O pads support DDR2/LVDDR2, LPDDR2, and DDR3 operational modes.
4.3.2.1
The DDR2 interface fully complies with JESD79-2E DDR2 JEDEC standard release April, 2008. The
parameters in
Freescale Semiconductor
Low-level output current
(1.65-3.1V OVDD)
High-Level DC input voltage
Low-Level DC input voltage
Input Hysteresis
Schmitt trigger VT+
Schmitt trigger VT–
Input current (no pull-up/down)
Input current (22 kΩ Pull-up)
Input current (47 kΩ Pull-up)
Input current (100 kΩ Pull-up)
Input current (100 kΩ Pull-down)
Keeper Circuit Resistance
Overshoot and undershoot conditions (transitions above OVDD and below GND) on switching pads must be held below 0.6 V,
and the duration of the overshoot/undershoot must not exceed 10% of the system clock cycle. Overshoot/ undershoot must be
controlled through printed circuit board layout, transmission line impedance matching, signal line termination, or other
methods. Non-compliance to this specification may affect device reliability or cause permanent damage to the device.
To maintain a valid level, the transition edge of the input must sustain a constant slew rate (monotonic) from the current DC
level through to the target DC level, VIL or VIH. Monotonic input transition time is from 0.1 ns to 1 s.
Hysteresis of 250 mV is guaranteed over all operating conditions when hysteresis is enabled.
Use an off-chip pull resistor of less than 60kΩ to override this keeper.
Parameter
LPDDR2 I/O DC Parameters
DDR2 Mode I/O DC Parameters
Table 11
2, 3
2, 3
i.MX53xA Automotive and Infotainment Applications Processors, Rev. 1
Table 10. GPIO I/O DC Electrical Characteristics (continued)
1, 2
are guaranteed per the operating ranges in
1, 2
Symbol
VHYS
VT+
VT–
VIH
VIL
IIN
IIN
IIN
IIN
IIN
Iol
Vout = 0.2
Low drive
Medium drive
High drive
Max drive
Test Conditions
OVDD = 1.875 V
OVDD = 2.775 V
VI = OVDD
VI = OVDD
VI = OVDD
V I= OVDD
VI = OVDD
VI = 0 V
VI = 0 V
VI = 0 V
VI = 0 V
VI = 0 V
×
OVDD
0.7
0.5
Table
×
×
0.25
Min
2.1
4.2
6.3
8.4
1.7
0
OVDD
OVDD
6, unless otherwise noted.
125
0.34
0.45
Typ
4
Electrical Characteristics
0.3
0.5
OVDD
×
×
Max
0.12
0.12
0.12
0.25
250
120
161
76
36
36
OVDD
OVDD
Unit
mA
nA
μA
μA
μA
μA
V
V
V
V
V
29

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