RRR015P03TL Rohm Semiconductor, RRR015P03TL Datasheet

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RRR015P03TL

Manufacturer Part Number
RRR015P03TL
Description
MOSFET P-CH 30V 1.5A TSMT3
Manufacturer
Rohm Semiconductor
Series
-r
Datasheet

Specifications of RRR015P03TL

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
160 mOhm @ 1.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
1.5A
Vgs(th) (max) @ Id
2.5V @ 1mA
Gate Charge (qg) @ Vgs
3.2nC @ 5V
Input Capacitance (ciss) @ Vds
230pF @ 10V
Power - Max
1W
Mounting Type
*
Package / Case
*
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RRR015P03TL
Manufacturer:
ROHM
Quantity:
18 000
Part Number:
RRR015P03TL
Manufacturer:
FSC
Quantity:
4 000
Part Number:
RRR015P03TL
Manufacturer:
ROHM/罗姆
Quantity:
20 000
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Switching
RRR015P03
Drain-source voltage
Gate-source voltage
Power dissipation
Channel temperature
Range of storage temperature
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
*Mounted on a ceramic board.
Silicon P-channel MOSFET
1) Low On-resistance.
2) High power package.
3) 4V drive.
Drain current
Source current
(Body Diode)
Channel to Ambient
 Structure
Features
 Application
 Packaging specifications
 Absolute maximum ratings (Ta = 25C)
 Thermal resistance
4V Drive Pch MOSFET
RRR015P03
Type
Package
Code
Basic ordering unit (pieces)
Parameter
Parameter
Continuous
Pulsed
Continuous
Pulsed
Rth (ch-a)
Symbol
Symbol
Taping
3000
V
V
Tstg
Tch
I
I
TL
P
DSS
GSS
I
I
DP
SP
D
S
D
*1
*1
*2
*
1/5
55 to +150
 Dimensions (Unit : mm)
 Inner circuit
Limits
Limits
TSMT3
(1) Gate
(2) Source
(3) Drain
0.8
1.5
30
150
125
20
1.0
6
6
(1)
(1)
(3)
Abbreviated symbol : UJ
C / W
(2)
Unit
Unit
C
C
W
V
V
A
A
A
A
∗1
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(3)
(2)
∗2
2010.07 - Rev.A

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RRR015P03TL Summary of contents

Page 1

Drive Pch MOSFET RRR015P03  Structure Silicon P-channel MOSFET Features 1) Low On-resistance. 2) High power package drive.  Application Switching  Packaging specifications Package Type Code Basic ordering unit (pieces) RRR015P03  Absolute maximum ratings (Ta ...

Page 2

RRR015P03  Electrical characteristics (Ta = 25C) Parameter Symbol Gate-source leakage Drain-source breakdown voltage V Zero gate voltage drain current Gate threshold voltage V Static drain-source on-state R resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on ...

Page 3

RRR015P03  Electrical characteristic curves 3 T =25°C a Pulsed = 10V 4. 4. 3. 2. 0.2 0.4 0.6 0.8 DRAIN-SOURCE VOLTAGE ...

Page 4

RRR015P03 500 T =25°C a Pulsed 400 = 1. 300 I =0.7A D 200 100 GATE-SOURCE VOLTAGE : V GS Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage 1000 T =25°C a f=1MHz ...

Page 5

RRR015P03  Measurement circuits D.U. Fig.1-1 Switching time measurement circuit D.U.T. I G(Const Fig.2-1 Gate charge ...

Page 6

No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose ...

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