RQ1E050RPTR Rohm Semiconductor, RQ1E050RPTR Datasheet - Page 2

• Manufacturer Part Number: RQ1E050RPTR
• Description: MOSFET P-CH 30V 5A TSMT8
• Manufacturer: Rohm Semiconductor
• Series: -r

Specifications of RQ1E050RPTR

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 31 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 13nC @ 5V
• Input Capacitance (ciss) @ Vds: 1300pF @ 10V
• Power - Max: 1.5W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
*Pulsed
*Pulsed
Gate-source leakage
Drain-source breakdown voltage V
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Forward Voltage
 Electrical characteristics (Ta = 25C)
Body diode characteristics (Source-Drain) (Ta = 25C)
RQ1E050RP
Parameter
Parameter
Symbol
Symbol
R
V
l Y
(BR)DSS
C
t
t
I
I
C
DS (on)
C
Q
Q
V
GS (th)
d(on)
d(off)
GSS
DSS
Q
t
t
oss
rss
SD
iss
r
gs
gd
fs
f
g
l
*
*
*
*
*
*
*
*
*
*
Min.
1.0
Min.
30
3.1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1300
Typ.
Typ.
180
160
3.5
4.5
22
32
36
10
15
90
50
13
-
-
-
-
-
-
2/5
Max.
Max.
2.5
1.2
10
1
31
45
50
-
-
-
-
-
-
-
-
-
-
-
-
Unit
Unit
m
nC
nC
nC
A
A
pF
pF
pF
ns
ns
ns
ns
V
V
S
V
V
I
V
V
I
I
I
I
V
V
f=1MHz
I
V
R
R
I
V
R
I
D
D
D
D
D
D
D
s
=5A, V
GS
DS
DS
DS
GS
GS
GS
=1mA, V
=5A, V
=2.5A, V
=2.5A, V
=5A, V
=2.5A, V
L
G
=5A, V
G
=10
=10
=20V, V
=30V, V
=10V, I
=10V
=0V
=10V
=5V R
6.0
Conditions
Conditions
GS
GS
DS
DD
GS
GS
DD
=0V
GS
L
=10V
=10V
D
DS
GS
=1mA
15V
=0V
=4.5V
=4.0V
3
=0V
=0V
15V
2010.07- Rev.A
Data Sheet