DTC123JUBTL Rohm Semiconductor, DTC123JUBTL Datasheet
DTC123JUBTL
Manufacturer Part Number
DTC123JUBTL
Description
TRANS DIGITAL NPN 50V 100MA UMT3
Manufacturer
Rohm Semiconductor
Series
-r
Datasheet
1.DTC123JUBTL.pdf
(3 pages)
Specifications of DTC123JUBTL
Transistor Type
NPN - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
2.2K
Resistor - Emitter Base (r2) (ohms)
47K
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 10mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 250µA, 5mA
Current - Collector Cutoff (max)
500nA
Frequency - Transition
250MHz
Power - Max
200mW
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DTC123JUBTL
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Transistors
100mA / 50V Digital transistors
(with built-in resistors)
DTC123JUB
Inverter, Interface, Driver
1) Built-in bias resistors enable the configuration of
2) The bias resistors consist of thin-film resistors
3) Only the on/off conditions need to be set for
NPN silicon epitaxial planar transistor type
(Resistor built-in)
Part No.
DTC123JUB
∗1 Characteristics of built-in transistor
∗2 Each terminal mounted on a recommended land
Supply voltage
Input voltage
Collector current
Output current
Power dissipation
Junction temperature
Range of storage temperature
Features
Structure
Packaging specifications
Applications
Absolute maximum ratings (Ta=25°C)
an inverter circuit without connecting external
input resistors (see equivalent circuit).
with complete isolation to allow negative biasing
of the input. They also have the advantage of
almost completely eliminating parasitic effects.
operation, making the device design easy.
Parameter
Package
Packaging type
Code
Basic ordering unit (pieces)
Symbol
Ic(max)
Tstg
V
V
P
Io
Tj
CC
IN
D
∗2
∗1
UMT3F
Taping
3000
TL
−55 to +150
−5 to +12
Limits
100
100
200
150
50
Unit
mW
mA
mA
°C
°C
V
V
Dimensions (Unit : mm)
(1) IN
(2) GND
(3) OUT
UMT3F
R
Equivalent circuit
1
IN
=2.2kΩ, R
IN
R
1
2
R
=47kΩ
2
0.32
Abbreviated symbol : 142
0.65 0.65
(3)
(1)
GND
1.3
2.0
(2)
GND
OUT
OUT
DTC123JUB
0.13
Each lead has same dimensions
0.9
1/2
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DTC123JUBTL Summary of contents
Page 1
Transistors 100mA / 50V Digital transistors (with built-in resistors) DTC123JUB Applications Inverter, Interface, Driver Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of ...
Page 2
Transistors Electrical characteristics (Ta=25°C) Parameter Symbol V I(off) Input voltage V I(on) Output voltage V O(on) Input current I I Output current I O(off) DC current gain G I ∗ Transition frequency f T Input resistance R 1 Resistance ratio ...
Page 3
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...