BD8966FVM-TR Rohm Semiconductor, BD8966FVM-TR Datasheet - Page 8

• Manufacturer Part Number: BD8966FVM-TR
• Description: IC SWITCHING REG W/MOSFET MSOP8
• Manufacturer: Rohm Semiconductor
• Series: -r
• Type: Step-Down (Buck), PWM - Current Moder

Specifications of BD8966FVM-TR

• Internal Switch(s): Yes
• Synchronous Rectifier: Yes
• Number Of Outputs: 1
• Voltage - Output: 1 V ~ 2.5 V
• Current - Output: 800mA
• Frequency - Switching: 1MHz
• Voltage - Input: 4 V ~ 5.5 V
• Operating Temperature: -25°C ~ 85°C
• Mounting Type: *
• Package / Case: *
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

●Switching regulator efficiency
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BD8966FVM
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Efficiency ŋ may be expressed by the equation shown below:
η=
Efficiency may be improved by reducing the switching regulator power dissipation factors P
Dissipation factors:
1) ON resistance dissipation of inductor and FET:PD(I
2) Gate charge/discharge dissipation:PD(Gate)
3) Switching dissipation:PD(SW)
4) ESR dissipation of capacitor:PD(ESR)
5) Operating current dissipation of IC:PD(IC)
1)PD(I
2)PD(Gate)=Cgs×f×V (Cgs[F]:Gate capacitance of FET, f[Hz]:Switching frequency, V[V]:Gate driving voltage of FET)
4)PD(ESR)=I
5)PD(IC)=Vin×I
3)PD(SW)=
V
2
OUT
Vin×Iin
R)=I
×I
OUT
OUT
Vin
RMS
2
×(R
2
CC
×C
2
×ESR (I
×100[%]=
RSS
COIL
I
(I
DRIVE
CC
×I
+R
[A]:Circuit current.)
OUT
ON
RMS
×f
) (R
P
OUT
Pin
[A]:Ripple current of capacitor、ESR[Ω]:Equivalent series resistance.)
COIL
×100[%]=
(C
[Ω]:DC resistance of inductor, R
RSS
[F]:Reverse transfer capacitance of FET, I
P
OUT
2
P
R)
OUT
+P
8/14
D
α
×100[%]
ON
[Ω]:ON resistance of FET, I
DRIVE
D
[A]:Peak current of gate.)
α as follows:
OUT
Technical Note
2010.04 - Rev.B
[A]:Output current.)