S29GL256S10TFI010 Spansion Inc., S29GL256S10TFI010 Datasheet - Page 35

• Manufacturer Part Number: S29GL256S10TFI010
• Description: Flash 256 MBIT 3V 100NS PAGE MODE FLASH
• Manufacturer: Spansion Inc.

Specifications of S29GL256S10TFI010

• Data Bus Width: 16 bit
• Memory Type: Flash
• Memory Size: 256 Mbit
• Architecture: Uniform
• Timing Type: Asynchronous
• Interface Type: CFI
• Access Time: 100 ns
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 2.7 V
• Maximum Operating Current: 100 mA
• Operating Temperature: - 40 C to + 85 C
• Mounting Style: SMD/SMT
• Package / Case: TSOP-56
• Lead Free Status / Rohs Status: Compliant

February 11, 2011 S29GL_128S_01GS_00_01
5.3.5
5.3.6
5.3.6.1
Erase Suspend / Erase Resume
ASO Entry and Exit
The Erase Suspend command allows the system to interrupt a sector erase operation and then read data
from, or program data to, the main flash array. This command is valid only during sector erase or program
operation. The Erase Suspend command is ignored if written during the chip erase operation.
When the Erase Suspend command is written during the sector erase operation, the device requires a
maximum of t
After the erase operation has been suspended, the part enters the erase-suspend mode. The system can
read data from or program data to the main flash array. Reading at any address within erase-suspended
sectors produces undetermined data. The system can determine if a sector is actively erasing or is erase-
suspended by reading the Status Register or using Data Polling. Refer to
information on these status bits. Refer to
After an erase-suspended program operation is complete, the EAC returns to the erase-suspend state. The
system can determine the status of the program operation by reading the Status Register, just as in the
standard program operation.
If a program failure occurs during erase suspend the Clear or Reset commands will return the device to the
erase suspended state. Erase will need to be resumed and completed before again trying to program the
memory array.
Accesses and commands that are valid during Erase Suspend are:
 Read to any other non-suspended sector
 Program to any other non-suspended sector
 Status Read command
 Enter DYB ASO
 DYB Set
 DYB Clear
 DYB Status Read
 Exit ASO or Command Set Exit
 Erase Resume command
To resume the sector erase operation, the system must write the Erase Resume command. The device will
revert to erasing and the status bits will be updated. Further writes of the Resume command are ignored.
Another Erase Suspend command can be written after the chip has resumed erasing.
Erase suspend and resume is not supported while entered in an ASO. While in erase suspend entry into ASO
is not supported.
ID-CFI ASO
The system can access the ID-CFI ASO by issuing the ID-CFI Entry command sequence during Read Mode.
This entry command uses the Sector Address (SA) in the command to determine which sector will be overlaid
and which sector's protection state is reported in word location 2h. See the detail description
on page
The ID-CFI ASO allows the following activities:
 Read ID-CFI ASO, using the same SA as used in the entry command.
 Read Sector Protection State at Sector Address (SA) + 2h. Location 2h provides volatile information on the
current state of sector protection for the sector addressed. Bit 0 of the word at location 2h shows the logical
NAND of the PPB and DYB bits related to the addressed sector such that if the sector is protected by either
the PPB=0 or the DYB=0 bit for that sector the state shown is protected. (1= Sector protected, 0= Sector
unprotected). This protection state is shown only for the SA selected when entering ID-CFI ASO. Reading
other SA provides undefined data. To read a different SA protection state ASO exit command must be used
and then enter ID-CFI ASO again with the new SA.
D a t a
60.
ESL
S h e e t
(erase suspend latency) to suspend the erase operation and update the status bits.
( A d v a n c e
GL-S MirrorBit
Data Polling Status on page 40
I n f o r m a t i o n )
®
Family
Status Register on page 38
for more information.
Table 6.2
for
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