HN58V65AP-10 HITACHI, HN58V65AP-10 Datasheet - Page 23

• Manufacturer Part Number: HN58V65AP-10
• Manufacturer: HITACHI

Specifications of HN58V65AP-10

• Lead Free Status / Rohs Status: Not Compliant

HN58V65A Series, HN58V66A Series
WE, CE
WE
During a write cycle, addresses are latched by the falling edge of WE or CE, and data is latched by the
rising edge of WE or CE.
Write/Erase Endurance and Data Retention Time
The endurance is 10
programming (1
page-programmed less than 10
Data Protection
To prevent this phenomenon, this device has a noise cancellation function that cuts noise if its width is 15
ns or less.
1. Data Protection against Noise on Control Pins (CE, OE, WE) during Operation
WE
WE
Rev.3.00, Dec. 04.2003, page 21 of 26
During readout or standby, noise on the control pins may act as a trigger and turn the EEPROM to
programming mode by mistake. Be careful not to allow noise of a width of more than 15 ns on the
control pins.
CE Pin Operation
CE
CE
cumulative failure rate). The data retention time is more than 10 years when a device is
5
cycles in case of the page programming and 10
4
cycles.
WE
CE
OE
15 ns max
4
cycles in case of the byte
V
0 V
V
0 V
IH
IH