SI1413EDH-T1 Vishay, SI1413EDH-T1 Datasheet - Page 2

• Manufacturer Part Number: SI1413EDH-T1
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of SI1413EDH-T1

• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.115Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±12V
• Continuous Drain Current: 2.3A
• Power Dissipation: 1W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: SC-70
• Lead Free Status / Rohs Status: Not Compliant

Si1413EDH
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
b
8
6
4
2
0
0
Gate-Current vs. Gate-Source Voltage
3
V
a
a
GS
- Gate-to-Source Voltage (V)
a
6
J
= 25 °C, unless otherwise noted
a
9
Symbol
R
V
I
t
t
I
I
GS(th)
D(on)
DS(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
Q
g
12
t
t
SD
fs
gs
gd
r
f
g
15
V
DS
V
I
D
DS
≅ - 1 A, V
= - 10 V, V
18
= - 16 V, V
V
V
V
V
V
V
V
V
V
V
DS
GS
GS
GS
I
DS
DS
DS
DS
S
DD
DS
= - 1.4 A, V
Test Conditions
= - 5 V, V
= - 4.5 V, I
= - 2.5 V, I
= - 1.8 V, I
= V
= 0 V, V
= - 10 V, I
= 0 V, V
= - 16 V, V
= - 10 V, R
GEN
GS
GS
GS
, I
= - 4.5 V, I
= - 4.5 V, R
D
GS
GS
= 0 V, T
GS
= - 100 µA
D
D
D
D
GS
= ± 4.5 V
GS
= ± 12 V
L
= - 2.9 A
= - 4.5 V
= - 2.9 A
= - 2.4 A
= - 1.0 A
= 10 Ω
= 0 V
= 0 V
10 000
1000
J
0.01
D
100
= 85 °C
0.1
g
10
= - 2.9 A
1
= 6 Ω
0
Gate-Current vs. Gate-Source Voltage
V
- 0.45
GS
Min.
3
- 4
- Gate-to-Source Voltage (V)
T
J
= 150 °C
0.095
0.125
0.180
Typ.
- 0.8
0.75
5.6
1.2
1.2
1.6
3.9
3.9
6
S10-0935-Rev. B, 19-Apr-10
6
T
J
Document Number: 71396
= 25 °C
0.115
0.155
0.220
± 1.5
Max.
± 10
- 1.1
1.1
2.3
5.5
5.5
- 1
- 5
8
9
Unit
mA
µA
µA
nC
µs
Ω
V
A
S
V
12