SI1413EDH-T1 Vishay, SI1413EDH-T1 Datasheet - Page 4

• Manufacturer Part Number: SI1413EDH-T1
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of SI1413EDH-T1

• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.115Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±12V
• Continuous Drain Current: 2.3A
• Power Dissipation: 1W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: SC-70
• Lead Free Status / Rohs Status: Not Compliant

Si1413EDH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.1
- 0.2
0.1
0.4
0.3
0.2
0.1
0.0
10
1
0.01
- 50
0.1
0
2
1
10
Source-Drain Diode Forward Voltage
- 25
-4
Duty Cycle = 0.5
0.1
0.05
0.02
0.2
0.3
V
SD
T
0
J
T
J
- Source-to-Drain Voltage (V)
- Junction Temperature (°C)
I
Threshold Voltage
= 150 °C
D
Single Pulse
= 250 µA
25
0.6
10
-3
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.9
T
75
J
= 25 °C
100
10
1.2
-2
125
1.5
150
Square Wave Pulse Duration (s)
10
-1
0.5
0.4
0.3
0.2
0.1
0.0
35
28
21
14
0.001
1
7
0
0
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
1
V
0.01
GS
- Gate-to-Source Voltage (V)
1
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
0
P
2
DM
JM
Time (s)
- T
t
0
1
A
S10-0935-Rev. B, 19-Apr-10
1 .
= P
3
t
Document Number: 71396
2
DM
I
D
Z
= - 2.9 A
thJA
100
thJA
t
t
1
2
4
(t)
= 100 °C/W
1
5
6
0
0
1
6
0