SI1413EDH-T1 Vishay, SI1413EDH-T1 Datasheet - Page 3

• Manufacturer Part Number: SI1413EDH-T1
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of SI1413EDH-T1

• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.115Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±12V
• Continuous Drain Current: 2.3A
• Power Dissipation: 1W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: SC-70
• Lead Free Status / Rohs Status: Not Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71396
S10-0935-Rev. B, 19-Apr-10
0.5
0.4
0.3
0.2
0.1
0.0
8
6
4
2
0
5
4
3
2
1
0
0.0
0.0
0
V
I
D
DS
On-Resistance vs. Drain Current
= - 2.9 A
1.5
1.5
= 10 V
1
V
V
GS
DS
Output Characteristics
Q
= 1.8 V
V
- Drain-to-Source Voltage (V)
g
GS
I
- Total Gate Charge (nC)
D
- Drain Current (A)
Gate Charge
= 5 V thru 2.5 V
3.0
3.0
2
V
GS
= 2.5 V
4.5
4.5
3
1.5 V
2 V
1 V
V
GS
6.0
6.0
4
= 4.5 V
7.5
7.5
5
1000
800
600
400
200
1.6
1.4
1.2
1.0
0.8
0.6
0
8
6
4
2
0
- 50
0.0
0
C
rss
On-Resistance vs. Junction Temperature
- 25
V
I
D
GS
0.5
= - 2.9 A
4
= 4.5 V
V
V
DS
T
GS
Transfer Characteristics
0
J
C
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
oss
1.0
25
Capacitance
8
T
25 °C
C
1.5
50
Vishay Siliconix
= - 55 °C
C
Si1413EDH
iss
12
75
2.0
www.vishay.com
100
125 °C
16
2.5
125
150
3.0
20
3