LH28F008BJT-TTLZ2 Sharp Electronics, LH28F008BJT-TTLZ2 Datasheet - Page 35

• Manufacturer Part Number: LH28F008BJT-TTLZ2
• Manufacturer: Sharp Electronics

Specifications of LH28F008BJT-TTLZ2

• Cell Type: NOR
• Density: 8Mb
• Access Time (max): 100ns
• Interface Type: Parallel
• Boot Type: Top
• Address Bus: 20b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: 0C to 70C
• Package Type: TSOP
• Sync/async: Asynchronous
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 1M
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 40
• Lead Free Status / Rohs Status: Not Compliant

6.2.5 AC Characteristics - Write Operations
NOTES:
1. Read timing characteristics during block erase, full chip erase, byte write and lock-bit configuration operations are the
2. Sampled, not 100% tested.
3. Refer to Table 3 for valid A
4. V
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
AVAV
PHWL
ELWL
WLWH
SHWH
VPWH
AVWH
DVWH
WHDX
WHAX
WHEH
WHWL
WHR0
WHGL
QVVL
QVSL
Sym.
same as during read-only operations. Refer to AC Characteristics for read-only operations.
success (SR.1/3/4/5=0).
CCW
should be held at V
Write Cycle Time
RP# High Recovery to WE# Going Low
CE# Setup to WE# Going Low
WE# Pulse Width
WP#V
V
Address Setup to WE# Going High
Data Setup to WE# Going High
Data Hold from WE# High
Address Hold from WE# High
CE# Hold from WE# High
WE# Pulse Width High
WE# High to SR.7 Going "0"
Write Recovery before Read
V
WP# V
CCW
CCW
IH
Setup to WE# Going High
Hold from Valid SRD
IH
Setup to WE# Going High
Hold from Valid SRD
CCWH1/2
IN
and D
Parameter
until determination of block erase, full chip erase, byte write or lock-bit configuration
IN
for block erase, full chip erase, byte write or lock-bit configuration.
V
CC
=2.7V-3.6V, T
(1)
A
=0°C to +70°C
Notes
2,4
2,4
2
2
2
3
3
Min.
100
100
100
50
50
50
20
1
0
0
0
0
0
0
0
Max.
100
Rev. 1.27
Unit
ns
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns