LH28F008BJT-TTLZ2 Sharp Electronics, LH28F008BJT-TTLZ2 Datasheet - Page 35
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LH28F008BJT-TTLZ2
Manufacturer Part Number
LH28F008BJT-TTLZ2
Description
Manufacturer
Sharp Electronics
Datasheet
1.LH28F008BJT-TTLZ2.pdf
(44 pages)
Specifications of LH28F008BJT-TTLZ2
Cell Type
NOR
Density
8Mb
Access Time (max)
100ns
Interface Type
Parallel
Boot Type
Top
Address Bus
20b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
0C to 70C
Package Type
TSOP
Sync/async
Asynchronous
Operating Temperature Classification
Commercial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
1M
Supply Current
30mA
Mounting
Surface Mount
Pin Count
40
Lead Free Status / Rohs Status
Not Compliant
6.2.5 AC Characteristics - Write Operations
NOTES:
1. Read timing characteristics during block erase, full chip erase, byte write and lock-bit configuration operations are the
2. Sampled, not 100% tested.
3. Refer to Table 3 for valid A
4. V
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
AVAV
PHWL
ELWL
WLWH
SHWH
VPWH
AVWH
DVWH
WHDX
WHAX
WHEH
WHWL
WHR0
WHGL
QVVL
QVSL
Sym.
same as during read-only operations. Refer to AC Characteristics for read-only operations.
success (SR.1/3/4/5=0).
CCW
should be held at V
Write Cycle Time
RP# High Recovery to WE# Going Low
CE# Setup to WE# Going Low
WE# Pulse Width
WP#V
V
Address Setup to WE# Going High
Data Setup to WE# Going High
Data Hold from WE# High
Address Hold from WE# High
CE# Hold from WE# High
WE# Pulse Width High
WE# High to SR.7 Going "0"
Write Recovery before Read
V
WP# V
CCW
CCW
IH
Setup to WE# Going High
Hold from Valid SRD
IH
Setup to WE# Going High
Hold from Valid SRD
CCWH1/2
IN
and D
Parameter
until determination of block erase, full chip erase, byte write or lock-bit configuration
IN
for block erase, full chip erase, byte write or lock-bit configuration.
V
CC
=2.7V-3.6V, T
(1)
A
=0°C to +70°C
Notes
2,4
2,4
2
2
2
3
3
Min.
100
100
100
50
50
50
20
1
0
0
0
0
0
0
0
Max.
100
Rev. 1.27
Unit
ns
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns