LH28F160BJHE-BTLZD Sharp Electronics, LH28F160BJHE-BTLZD Datasheet - Page 28
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LH28F160BJHE-BTLZD
Manufacturer Part Number
LH28F160BJHE-BTLZD
Description
Manufacturer
Sharp Electronics
Datasheet
1.LH28F160BJHE-BTLZD.pdf
(44 pages)
Specifications of LH28F160BJHE-BTLZD
Cell Type
NOR
Density
16Mb
Access Time (max)
100ns
Interface Type
Parallel
Boot Type
Bottom
Address Bus
20b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
16b
Number Of Words
1M
Supply Current
30mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / Rohs Status
Not Compliant
5.7 Data Protection Method
Noises having a level exceeding the limit specified in the
specification may be generated under specific operating
conditions on some systems. Such noises, when induced
onto WE# signal or power supply, may be interpreted as
false commands, causing undesired memory updating. To
protect the data stored in the flash memory against
unwanted overwriting, systems operating with the flash
memory should have the following write protect designs,
as appropriate:
1) Protecting data in specific block
When a lock bit is set, the corresponding block (includes
the 2 boot blocks) is protected against overwriting. By
setting a WP# to low, only the 2 boot blocks can be
protected against overwriting. By using this feature, the
flash memory space can be divided into the program
section (locked section) and data section (unlocked
section). The permanent lock bit can be used to prevent
false block bit setting. For further information on
setting/resetting lock-bit, refer to the specification. (See
chapter 4.10 and 4.11.)
2) Data protection through V
When the level of V
voltage), write operation on the flash memory is disabled.
All blocks are locked and the data in the blocks are
completely write protected. For the lockout voltage, refer
to the specification. (See chapter 6.2.3.)
3) Data protection through RP#
When the RP# is kept low during read mode, the flash
memory will be reset mode, then write protecting all
blocks. When the RP# is kept low during power up and
power down sequence such as voltage transition, write
operation on the flash memory is disabled, write
protecting all blocks. For the details of RP# control, refer
to the specification. (See chapter 5.5 and 6.2.7.)
CCW
is lower than V
CCW
CCWLK
Rev. 1.27
(lockout