LH28F160BJHE-BTLZD Sharp Electronics, LH28F160BJHE-BTLZD Datasheet - Page 35
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LH28F160BJHE-BTLZD
Manufacturer Part Number
LH28F160BJHE-BTLZD
Description
Manufacturer
Sharp Electronics
Datasheet
1.LH28F160BJHE-BTLZD.pdf
(44 pages)
Specifications of LH28F160BJHE-BTLZD
Cell Type
NOR
Density
16Mb
Access Time (max)
100ns
Interface Type
Parallel
Boot Type
Bottom
Address Bus
20b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
16b
Number Of Words
1M
Supply Current
30mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / Rohs Status
Not Compliant
6.2.5 AC CHARACTERISTICS - WRITE OPERATIONS
NOTES:
1. Read timing characteristics during block erase, full chip erase, word write and lock-bit configuration operations are the
2. Sampled, not 100% tested.
3. Refer to Table 3 for valid A
4. V
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
AVAV
PHWL
ELWL
WLWH
SHWH
VPWH
AVWH
DVWH
WHDX
WHAX
WHEH
WHWL
WHR0
WHGL
QVVL
QVSL
Sym.
same as during read-only operations. Refer to AC Characteristics for read-only operations.
success (SR.1/3/4/5=0).
CCW
should be held at V
Write Cycle Time
RP# High Recovery to WE# Going Low
CE# Setup to WE# Going Low
WE# Pulse Width
WP#V
V
Address Setup to WE# Going High
Data Setup to WE# Going High
Data Hold from WE# High
Address Hold from WE# High
CE# Hold from WE# High
WE# Pulse Width High
WE# High to SR.7 Going "0"
Write Recovery before Read
V
WP# V
CCW
CCW
IH
Setup to WE# Going High
Hold from Valid SRD
IH
Setup to WE# Going High
Hold from Valid SRD
CCWH1/2
IN
and D
Parameter
until determination of block erase, full chip erase, word write or lock-bit configuration
IN
for block erase, full chip erase, word write or lock-bit configuration.
V
CC
=2.7V-3.6V, T
A
=-40°C to +85°C
(1)
Notes
2,4
2,4
2
2
2
3
3
Min.
100
100
100
10
50
50
50
10
30
1
0
0
0
0
0
Max.
100
Rev. 1.27
Unit
ns
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns