LH28F320BFN-PTTLZJ Sharp Electronics, LH28F320BFN-PTTLZJ Datasheet
LH28F320BFN-PTTLZJ
Specifications of LH28F320BFN-PTTLZJ
Related parts for LH28F320BFN-PTTLZJ
LH28F320BFN-PTTLZJ Summary of contents
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... RELIMINARY RODUCT LH28F320BFN-PTTLZJ PECIFICATIONS ® Flash Memory 32M (2M × 16) (Model No.: LHF32FDH) Spec No.: FM024004 Issue Date: April 1, 2002 Integrated Circuits Group ...
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Handle this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited without the express written permission of the company. • When using the products covered ...
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SOP Pinout ................................................... 3 Pin Descriptions.......................................................... 4 Memory Map .............................................................. 5 Identifier Codes and OTP Address for Read Operation ............................................. 6 OTP Block Address Map for OTP Program............... 7 Bus Operation............................................................. 8 Command Definitions ................................................ 9 Functions of ...
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... Fast program capability is provided through the use of high speed Page Buffer Program. Special OTP (One Time Program) block provides an area to store permanent code such as a unique number. * ETOX is a trademark of Intel Corporation. LHF32FDH LH28F320BFN-PTTLZJ 32Mbit (2Mbit×16) Enhanced Data Protection Features • Individual Block Lock and Block Lock-Down with Zero-Latency • ...
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CE# GND OE ...
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... INPUT latched on the rising edge of CE# or WE# (whichever goes high first). DEVICE POWER SUPPLY (2.7V-3.6V): With V V SUPPLY flash memory are inhibited. Device operations at invalid V CC Characteristics) produce spurious results and should not be attempted. GND SUPPLY GROUND: Do not float any ground pins. ...
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BLOCK NUMBER 70 4K-WORD 69 4K-WORD 68 4K-WORD 67 4K-WORD 66 4K-WORD 65 4K-WORD 64 4K-WORD 63 4K-WORD 62 32K-WORD 61 32K-WORD 60 32K-WORD 59 32K-WORD 58 32K-WORD 57 32K-WORD 56 32K-WORD 55 32K-WORD 54 32K-WORD 53 32K-WORD 52 ...
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Table 2. Identifier Codes and OTP Address for Read Operation Manufacturer Code Manufacturer Code Device Code Top Parameter Device Code Block Lock Configuration Block is Unlocked Code Block is Locked Block is not Locked-Down Block is Locked-Down OTP OTP ...
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Customer Programmable Area Lock Bit (DQ Factory Programmed Area Lock Bit (DQ Figure 3. OTP Block Address Map for OTP Program LHF32FDH - Customer Programmable Area Factory Programmed Area Reserved ...
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Table 3. Bus Operation Mode Notes RST# Read Array Output Disable V IH Standby V IH Reset Read Identifier Codes/OTP V Read Query 6,7 IH Write 4,5 NOTES: ...
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... Following the Read Identifier Codes/OTP command, read operations access manufacturer code, device code, block lock configuration code, and the data within OTP block (See Table 2). The Read Query command is available for reading CFI (Common Flash Interface) information. 5. Block erase, full chip erase or (page buffer) program cannot be executed when the selected block is locked. Unlocked block can be erased or programmed when RST ...
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Following the Clear Block Lock Bit command, the selected block is unlocked regardless of lock-down configuration. 10. Commands other than those shown above are reserved by SHARP for future device ...
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Table 5. Functions of Block Lock (1) State DQ 1 [00] 0 (3) 0 [01] [10] 1 [11] 1 NOTES =1: a block is locked =1: a block is locked-down Erase ...
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WSMS BESS BEFCES 7 6 SR.15 - SR.8 = RESERVED FOR FUTURE ENHANCEMENTS (R) SR.7 = WRITE STATE MACHINE STATUS (WSMS Ready 0 = Busy SR.6 = BLOCK ERASE SUSPEND STATUS (BESS) 1 ...
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SMS XSR.15-8 = RESERVED FOR FUTURE ENHANCEMENTS (R) XSR.7 = STATE MACHINE STATUS (SMS Page Buffer Program available 0 = Page Buffer Program not available XSR.6-0 = RESERVED FOR FUTURE ...
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Electrical Specifications 1.1 Absolute Maximum Ratings Operating Temperature During Read, Erase and Program ...... 0°C to +70°C Storage Temperature During under Bias............................... -10°C to +80°C During non Bias................................ -65°C to +125°C Voltage On Any Pin (except V )............................ ...
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Capacitance (T =+25°C, f=1MHz) A Parameter Symbol Input Capacitance C RST# Input Capacitance C Output Capacitance C OUT NOTE: 1. Sampled, not 100% tested. 1.2.2 AC Input/Output Test Conditions V CC INPUT 0.0 AC test inputs are ...
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DC Characteristics Symbol Parameter I Input Load Current LI I Output Leakage Current Standby Current CCS Automatic Power Savings Current CCAS Reset Power-Down Current CCD CC Average V Read ...
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AC Characteristics - Read-Only Operations Symbol t Read Cycle Time AVAV t Address to Output Delay AVQV t CE# to Output Delay ELQV t Page Address Access Time APA t OE# to Output Delay GLQV t RST# High ...
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(A) 20 (E) CE OE# ( (W) WE High (D/Q) 15 (P) RST# V ...
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(A) 20 (A) 2 CE# ( OE# ( WE# ( High (D/Q) 15-0 ...
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AC Characteristics - Write Operations Symbol t Write Cycle Time AVAV RST# High Recovery to WE# (CE#) Going Low PHWL PHEL CE# (WE#) Setup to WE# (CE#) Going Low ELWL WLEL t ...
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NOTE 1 NOTE VALID A (A) 20-0 ADDRESS CE# ( ELWL WLEL V IH OE# ( PHWL PHEL V IH WE# (W) V ...
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Reset Operations V IH RST# ( High (D/Q) 15 RST# ( High (D/Q) 15 (min GND ...
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Block Erase, Full Chip Erase, (Page Buffer) Program and OTP Program Performance Symbol Parameter 4K-Word Parameter Block t WPB Program Time 32K-Word Main Block t WMB Program Time t / WHQV1 Word Program Time t EHQV1 t / ...
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Related Document Information Document No. FUM00701 NOTE: 1. International customers should contact their local SHARP or distribution sales offices. LHF32FDH (1) Document Name LH28F320BF series Appendix 24 Rev. 2.41 ...
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A-1 RECOMMENDED OPERATING CONDITIONS A-1.1 At Device Power-Up AC timing illustrated in Figure A-1 is recommended for the supply voltages and the control signals at device power-up. If the timing in the figure is ignored, the device may not ...
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A-1.1.1 Rise and Fall Time Symbol t V Rise Time Input Signal Rise Time R t Input Signal Fall Time F NOTES: 1. Sampled, not 100% tested. 2. This specification is applied for not only the ...
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A-1.2 Glitch Noises Do not input the glitch noises which are below V as shown in Figure A-2 (b). The acceptable glitch noises are illustrated in Figure A-2 (a). Input Signal V (Min (Max.) IL Input Signal ...
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... A-2 RELATED DOCUMENT INFORMATION Document No. AP-001-SD-E AP-006-PT-E AP-007-SW-E NOTE: 1. International customers should contact their local SHARP or distribution sales office. (1) Document Name Flash Memory Family Software Drivers Data Protection Method of SHARP Flash Memory RP#, V Electric Potential Switching Circuit PP iv Rev. 1.10 ...
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... Head Office: No. 360, Bashen Road, Xin Development Bldg. 22 Waigaoqiao Free Trade Zone Shanghai 200131 P.R. China Email: smc@china.global.sharp.co.jp EUROPE SHARP Microelectronics Europe Division of Sharp Electronics (Europe) GmbH Sonninstrasse 3 20097 Hamburg, Germany Phone: (49) 40-2376-2286 Fax: (49) 40-2376-2232 www.sharpsme.com SINGAPORE SHARP Electronics (Singapore) PTE., Ltd. ...