IS61LV6416-12T ISSI, Integrated Silicon Solution Inc, IS61LV6416-12T Datasheet - Page 10

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IS61LV6416-12T

Manufacturer Part Number
IS61LV6416-12T
Description
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet

Specifications of IS61LV6416-12T

Density
1Mb
Access Time (max)
12ns
Sync/async
Asynchronous
Architecture
Not Required
Clock Freq (max)
Not RequiredMHz
Operating Supply Voltage (typ)
3.3V
Address Bus
16b
Package Type
TSOP-II
Operating Temp Range
0C to 70C
Number Of Ports
1
Supply Current
100mA
Operating Supply Voltage (min)
2.97V
Operating Supply Voltage (max)
3.63V
Operating Temperature Classification
Commercial
Mounting
Surface Mount
Pin Count
44
Word Size
16b
Number Of Words
64K
Lead Free Status / Rohs Status
Not Compliant

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IS61LV6416
IS61LV6416L
10
WRITE CYCLE NO. 4
Notes:
1. The internal Write time is defined by the overlap of CE = LOW, UB and/or LB = LOW, and WE = LOW. All signals must be
2. Tested with OE HIGH for a minimum of 4 ns before WE = LOW to place the I/O in a HIGH-Z state.
3. WE may be held LOW across many address cycles and the LB, UB pins can be used to control the Write function.
in valid states to initiate a Write, but any can be deasserted to terminate the Write. The
referenced to the rising or falling edge of the signal that terminates the Write.
ADDRESS
UB, LB
D
OUT
WE
D
OE
CE
IN
LOW
DATA UNDEFINED
(LB, UB Controlled, Back-to-Back Write)
t
HZWE
ADDRESS 1
t
SD
t
t
WORD 1
SA
WC
t
PBW
HIGH-Z
DATA
VALID
IN
t
t
HD
HA
t
SA
ADDRESS 2
t
t
(1,3)
SD
WC
WORD 2
t
PBW
DATA
VALID
IN
t
t
LZWE
SA
t
,
Integrated Silicon Solution, Inc.
HD
t
t
HA
HA
,
t
SD
, and
UB_CEWR4.eps
t
HD
timing is
ISSI
11/22/05
Rev. I
®

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