KM29W040AT Samsung Semiconductor, KM29W040AT Datasheet - Page 7

• Manufacturer Part Number: KM29W040AT
• Manufacturer: Samsung Semiconductor

Specifications of KM29W040AT

• Cell Type: NAND
• Density: 4Mb
• Access Time (max): 15us
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 8b
• Operating Supply Voltage (typ): 3.3/5V
• Operating Temp Range: 0C to 70C
• Package Type: TSOP-II
• Sync/async: Asynchronous
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 3V
• Operating Supply Voltage (max): 5.5V
• Word Size: 8b
• Number Of Words: 512K
• Supply Current: 20mA
• Mounting: Surface Mount
• Pin Count: 40
• Lead Free Status / Rohs Status: Not Compliant

VALID BLOCK
NOTE :
1. The KM29W040A may include invalid blocks. Invalid blocks are defined as blocks that contain one or more bad bits. Do not try to access these invalid
2. The 1st block, which is placed on 00h block address, is guaranteed to be a valid block
AC TEST CONDITION
(KM29W040AT:T
MODE SELECTION
NOTE : 1. X can be V
CAPACITANCE
NOTE : Capacitance is periodically sampled and not 100% tested.
Program/Erase Characteristics
KM29W040AT, KM29W040AIT
Valid Block Number
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Levels
Output Load
Input / Output Capacitance
Input Capacitance
Program Time
Number of Partial Program Cycles in the Same Frame
Block Erase Time
blocks for program and erase. During its lifetime of 10 years and/or 100K program/erase cycles,the minimum number of valid blocks are guaranteed
though its initial number could be reduced. (Refer to the attached technical notes)
CLE
H
H
X
X
X
X
L
L
L
L
L
2. WP should be biased to CMOS high or CMOS low for standby.
Parameter
Parameter
Item
ALE
X
IL
H
H
X
X
X
A
L
L
L
L
L
(1)
or V
=0 to 70 C, KM29W040AIT:T
(
T
IH
A
Parameter
=25 C, Vcc=5.0V, f=1.0MHz)
CE
H
X
X
X
L
L
L
L
L
L
L
Symbol
Symbol
N
C
C
VB
I/O
IN
WE
H
H
X
X
X
X
Vcc=3.0V ~ 3.6V
A
0.4V to 2.6V
=-40 to 85 C
Test Condition
RE
H
H
H
H
H
H
X
X
X
X
V
V
Min
IN
125
IL
=0V
=0V
Symbol
7
t
t
PROG
Nop
BERS
1 TTL GATE and CL = 100pF
,
0V/V
V
CC
WP
X
X
H
H
H
X
X
H
H
L
CC
=3.0V ~ 5.5V unless otherwise noted)
0.8V and 2.0V
(2)
Min
Typ.
Min
Value
Data Input
Sequential Read & Data Output
During Read(Busy)
During Program(Busy)
During Erase(Busy)
Write Protect
Stand-by
-
-
-
-
-
-
5ns
Read Mode
Write Mode
Typ
0.5
6
-
FLASH MEMORY
Vcc=3.6V ~ 5.5V
Max
Max
128
0.4V to 2.6V
10
10
Mode
Command Input
Address Input(3clock)
Command Input
Address Input(3clock)
Max
10
10
1
Block
Unit
Unit
pF
pF
cycles
Unit
ms
ms