5962-8959837MZA E2V, 5962-8959837MZA Datasheet - Page 40

• Manufacturer Part Number: 5962-8959837MZA
• Manufacturer: E2V

Specifications of 5962-8959837MZA

• Lead Free Status / Rohs Status: Supplier Unconfirmed

DSCC FORM 2234
APR 97
assured (see 3.5 herein).
method 1019 condition A, and as specified herein.
than 5k rads(Si). The post-anneal end-point electrical parameter limits shall be as specified in table I herein and shall be the
pre-irradiation end-point electrical parameter limit at 25°C ±5°C. Testing shall be performed at initial qualification and after any
design or process changes which may affect the RHA response of the device.
condition.
STD-883 and herein.
shall be performed on a technology process on the Standard Evaluation Circuit (SEC) or alternate SEP test vehicle as
approved by the qualifying activity at inital qualification and after any design or process changes which may affect the upset or
latchup characteristics. The recommended test conditions for SEP are as follows:
4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table IIA herein.
4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness
4.4.4.1 Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL-STD-883
4.4.4.1.1 Accelerated aging test. Accelerated aging tests shall be performed on all devices requiring a RHA level greater
4.4.4.2 Dose rate induced latchup testing. Dose rate induced latchup shall not occur under any recommended operating
4.4.4.3 Dose rate upset testing. Dose rate upset testing shall be performed in accordance with test method 1021 of MIL-
4.4.4.4 Single event phenomena (SEP). SEP testing shall be required on class V devices (see 1.4 herein). SEP testing
a. End-point electrical parameters shall be as specified in table IIA herein.
b. For device classes Q and V, the devices or test vehicle shall be subjected to radiation hardness assured tests as
a. Transient dose rate upset testing for class M devices shall be performed at initial qualification and after any design or
b. Transient dose rate upset testing for class Q and V devices shall be performed as specified by a TRB approved
c. The transient dose rate upset level shall be greater than or equal to 5
b. The fluence shall be ≥ 100 errors or ≥ 10
e. The test temperature shall be +25°C and the maximum rated operating temperature ±10°C.
a. The ion beam angle of incidence shall be between normal to the die surface and 60° to the normal, inclusive (i.e. 0° ≤
c. The flux shall be between 10
d. The particle range shall be ≥ 20 microns in silicon.
f. Bias conditions shall be V
DEFENSE SUPPLY CENTER COLUMBUS
to 1.0 µs.
angle ≤ 60°). No shadowing of the ion beam due to fixturing or package related effects is allowed.
measuring the cross-section at two flux rates which differ by at least an order of magnitude.
specified in MIL-PRF-38535 for the RHA level being tested. For device class M, the devices shall be subjected to
radiation hardness assured tests as specified in MIL-PRF-38535, appendix A for the RHA level being tested. All
device classes must meet the postirradiation end-point electrical parameter limits as defined in table I at T
±5°C, after exposure, to the subgroups specified in table IIA herein.
radiation hardness assurance plan and MIL-PRF-38535. Device parametric parameters that influence upset
immunity shall be monitored at the wafer level in accordance with the wafer level hardness assurance plan and
MIL-PRF-38535.
measurements.
process changes which may effect the RHA performance of the devices. Test 10 devices with 0 defects unless
otherwise specified.
MICROCIRCUIT DRAWING
COLUMBUS, OHIO 43218-3990
STANDARD
CC
= 4.5 V dc for the upset measurements and V
2
and 10
5
ions/cm
7
ions/cm
2
/s. The cross-section shall be verified to be flux independent by
2
.
SIZE
A
10
rads(Si)/s with a pulse width less than or equal
CC
REVISION LEVEL
= 5.5 V dc for the latchup
R
SHEET
5962-89598
A
= +25°C
40