CY62137CV33LL-55BVI Cypress Semiconductor Corp, CY62137CV33LL-55BVI Datasheet - Page 6

• Manufacturer Part Number: CY62137CV33LL-55BVI
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY62137CV33LL-55BVI

• Density: 2Mb
• Access Time (max): 55ns
• Sync/async: Asynchronous
• Architecture: Not Required
• Clock Freq (max): Not RequiredMHz
• Operating Supply Voltage (typ): 3.3V
• Address Bus: 17b
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Number Of Ports: 1
• Supply Current: 15mA
• Operating Supply Voltage (min): 3V
• Operating Supply Voltage (max): 3.6V
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 48
• Word Size: 16b
• Number Of Words: 128K
• Lead Free Status / Rohs Status: Not Compliant

Switching Characteristics
Over the operating range
Notes
Document Number: 38-05201 Rev. *H
Read Cycle
t
t
t
t
t
t
t
t
t
t
t
t
t
t
Write Cycle
t
t
t
t
t
t
t
t
t
t
t
8. Test conditions assume signal transition time of 5 ns or less, timing reference levels of V
9. At any given temperature and voltage condition, t
10. t
11. If both byte enables are toggled together, this value is 10 ns.
12. The internal write time of the memory is defined by the overlap of WE, CE = V
RC
AA
OHA
ACE
DOE
LZOE
HZOE
LZCE
HZCE
PU
PD
DBE
LZBE
HZBE
WC
SCE
AW
HA
SA
PWE
BW
SD
HD
HZWE
LZWE
Parameter
I
device.
signals can terminate a write by going INACTIVE. The data input setup and hold timing are referenced to the edge of the signal that terminates the write.
OL
HZOE
/I
OH
, t
HZCE
and 30 pF load capacitance.
, t
[12]
HZBE
Read Cycle Time
Address to Data Valid
Data Hold From Address Change
CE LOW to Data Valid
OE LOW to Data Valid
OE LOW to Low-Z
OE HIGH to High-Z
CE LOW to Low-Z
CE HIGH to High-Z
CE LOW to Power Up
CE HIGH to Power Down
BLE/BHE LOW to Data Valid
BLE/BHE LOW to Low-Z
BLE/BHE HIGH to High-Z
Write Cycle Time
CE LOW to Write End
Address Setup to Write End
Address Hold from Write End
Address Setup to Write Start
WE Pulse Width
BLE/BHE LOW to Write End
Data Setup to Write End
Data Hold From Write End
WE LOW to High-Z
WE HIGH to Low-Z
, and t
HZWE
[8]
transitions are measured when the output enters a high-impedance state.
[9]
[9]
[9, 10]
[9, 10]
[9, 10]
[9]
Description
HZCE
[9, 11]
[9, 10]
is less than t
LZCE
, t
HZBE
IL
, BHE, and/or BLE = V
is less than t
CC(Typ)
LZBE
/2, input pulse levels of 0 to V
, t
Min
55
55
10
10
45
45
40
50
25
10
HZOE
5
0
5
0
0
0
IL
. All signals must be ACTIVE to initiate a write and any of these
55 ns
is less than t
CY62137CV30/33 MoBL
Max
55
55
25
20
20
55
55
20
20
LZOE
, and t
CY62137CV MoBL
CC(Typ)
Min
70
10
10
70
60
60
45
60
30
10
HZWE
5
0
5
0
0
0
, and output loading of the specified
70 ns
is less than t
Max
70
70
35
25
25
70
70
25
25
LZWE
Page 6 of 13
for any given
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
®
®
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