SI4924DY Vishay, SI4924DY Datasheet

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SI4924DY

Manufacturer Part Number
SI4924DY
Description
Manufacturer
Vishay
Type
Power MOSFETr
Datasheet

Specifications of SI4924DY

Number Of Elements
2
Polarity
N
Channel Mode
Enhancement
Drain-source On-volt
30V
Gate-source Voltage (max)
±20V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC N
Lead Free Status / Rohs Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4924DY
Manufacturer:
SIL
Quantity:
2 576
Part Number:
SI4924DY-T1-E3
Manufacturer:
VISHAY
Quantity:
38 892
Notes
a.
Document Number: 71163
S-03950—Rev. B, 26-May-03
PRODUCT SUMMARY
Ordering Information: Si4924DY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
Channel 1
Channel-1
Channel 2
Channel-2
Surface Mounted on 1” x 1” FR4 Board.
i
G
G
J
S
S
1
1
2
2
ti
1
2
3
4
t A bi
V
Asymetrical Dual N-Channel 30-V (D-S) MOSFET
DS
Parameter
Parameter
Si4924DY-T1 (with Tape and Reel)
30
30
Top View
(V)
SO-8
J
J
a
a
= 150_C)
= 150_C)
t
a
a
0.0145 @ V
0.0105 @ V
a
a
0.030 @ V
0.022 @ V
8
7
6
5
r
DS(on)
D
D
D
D
Steady-State
Steady-State
1
2
2
2
a
t v 10 sec
T
T
T
T
A
A
A
A
GS
GS
GS
GS
= 25_C
= 70_C
= 25_C
= 70_C
(W)
= 4.5 V
= 10 V
= 4.5 V
= 10 V
A
Symbol
Symbol
= 25_C UNLESS OTHERWISE NOTED)
T
R
R
R
V
J
V
I
P
P
, T
I
I
DM
I
thJA
thJC
DS
GS
D
D
S
D
D
stg
I
D
11.5
6.3
5.4
10
(A)
G
1
10 secs
6.3
5.4
1.3
1.4
0.9
Typ
100
72
51
N-Channel 1
MOSFET
Channel-1
Channel-1
D
S
1
1
30
Steady State
0.64
5.3
4.2
0.9
1.0
Max
125
90
63
- 55 to 150
G
"20
30
2
10 secs
11.5
9.5
2.2
2.4
1.5
Typ
D
43
82
25
2
Channel-2
S
Channel-2
N-Channel 2
2
MOSFET
Vishay Siliconix
D
2
40
Steady State
D
2
1.15
1.25
0.80
8.6
6.9
Max
Si4924DY
100
53
30
www.vishay.com
Unit
Unit
_C/W
C/W
_C
W
W
V
V
A
A
1

Related parts for SI4924DY

SI4924DY Summary of contents

Page 1

... Top View Ordering Information: Si4924DY Si4924DY-T1 (with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current Continuous Source Current (Diode Conduction Maximum Power Dissipation Maximum Power Dissipation ...

Page 2

... Si4924DY Vishay Siliconix MOSFET SPECIFICATIONS (T Parameter Static Gate Threshold Voltage Gate Threshold Voltage Gate-Body Leakage Gate Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current State Drain Current On-State Drain Current b b Drain-Source On-State Resistance Drain Source On State Resistance ...

Page 3

... Gate Charge 6 Total Gate Charge (nC) g Document Number: 71163 S-03950—Rev. B, 26-May- 1000 800 600 400 GS 200 Si4924DY Vishay Siliconix CHANNEL−1 Transfer Characteristics 125_C C 6 25_C - 55_C 0 0.0 0.5 1.0 1.5 2.0 2.5 3 Gate-to-Source Voltage (V) GS Capacitance C iss C oss C rss ...

Page 4

... Si4924DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 150_C 0.0 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD Threshold Voltage 0.6 0.4 = 250 0.2 - 0.0 - 0.2 - 0.4 - 0.6 - 0 Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 ...

Page 5

... I - Drain Current (A) D Document Number: 71163 S-03950—Rev. B, 26-May- Square Wave Pulse Duration (sec 4 Si4924DY Vishay Siliconix CHANNEL− CHANNEL−2 Transfer Characteristics 125_C C 10 25_C - 55_C Gate-to-Source Voltage (V) GS Capacitance 3500 3000 2500 C iss ...

Page 6

... Si4924DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Gate Charge 11 Total Gate Charge (nC) g Source-Drain Diode Forward Voltage 150_C 0.0 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD Threshold Voltage 0.4 0.2 = 250 0.0 - 0.2 - 0.4 - 0 Temperature (_C) J www.vishay.com 25_C J 1.0 1.2 1 ...

Page 7

... Single Pulse 0. Document Number: 71163 S-03950—Rev. B, 26-May-03 Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot -2 10 Square Wave Pulse Duration (sec) Si4924DY Vishay Siliconix CHANNEL−2 Notes Duty Cycle Per Unit Base = R = 82_C/W thJA (t) 3 ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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