SI4924DY Vishay, SI4924DY Datasheet - Page 6

• Manufacturer Part Number: SI4924DY
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of SI4924DY

• Number Of Elements: 2
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Lead Free Status / Rohs Status: Not Compliant

www.vishay.com
6
Si4924DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
- 0.0
- 0.2
- 0.4
- 0.6
- 0.8
50
10
10
0.4
0.2
1
8
6
4
2
0
0.0
0
- 50
V
I
0.2
D
- 25
DS
Source-Drain Diode Forward Voltage
= 11.5 A
T
10
J
= 15 V
V
= 150_C
SD
Q
0.4
0
g
- Source-to-Drain Voltage (V)
T
Threshold Voltage
- Total Gate Charge (nC)
J
- Temperature (_C)
25
Gate Charge
20
0.6
50
0.8
I
D
30
= 250 mA
75
T
J
1.0
= 25_C
100
40
1.2
125
1.4
50
150
1.6
1.4
1.2
1.0
0.8
0.6
0.05
0.04
0.03
0.02
0.01
0.00
100
- 50
80
60
40
20
0
0.001
0
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
- 25
V
I
Single Pulse Power, Junction-to-Ambient
D
GS
= 11.5 A
= 10 V
T
2
V
J
0
GS
0.01
- Junction Temperature (_C)
- Gate-to-Source Voltage (V)
25
4
Time (sec)
50
0.1
S-03950—Rev. B, 26-May-03
75
Document Number: 71163
6
CHANNEL−2
I
100
D
= 11.5 A
1
8
125
150
10
10