SI4924DY Vishay, SI4924DY Datasheet - Page 4

• Manufacturer Part Number: SI4924DY
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of SI4924DY

• Number Of Elements: 2
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Lead Free Status / Rohs Status: Not Compliant

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4
Si4924DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
- 0.0
- 0.2
- 0.4
- 0.6
- 0.8
- 1.0
40
10
0.6
0.4
0.2
1
0.01
0.0
0.1
- 50
2
1
10
-4
0.2
- 25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
Source-Drain Diode Forward Voltage
V
SD
0.4
T
0
J
- Source-to-Drain Voltage (V)
= 150_C
T
Threshold Voltage
J
10
- Temperature (_C)
25
0.6
-3
50
0.8
I
D
Normalized Thermal Transient Impedance, Junction-to-Ambient
= 250 mA
75
T
1.0
J
10
= 25_C
100
-2
1.2
125
Square Wave Pulse Duration (sec)
1.4
150
10
-1
1
0.10
0.08
0.06
0.04
0.02
0.00
100
80
60
40
20
0
0.001
0
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
10
2
V
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
GS
P
0.01
DM
JM
- Gate-to-Source Voltage (V)
- T
t
A
1
= P
4
Time (sec)
t
2
DM
Z
I
D
0.1
thJA
100
thJA
S-03950—Rev. B, 26-May-03
= 6.3 A
t
t
1
2
(t)
Document Number: 71163
= 100_C/W
6
CHANNEL−1
1
600
8
10
10