BC847W NXP Semiconductors, BC847W Datasheet - Page 8

• Manufacturer Part Number: BC847W
• Manufacturer: NXP Semiconductors

Specifications of BC847W

• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 45V
• Collector-base Voltage: 50V
• Emitter-base Voltage: 6V
• Collector Current (dc) (max): 100mA
• Dc Current Gain (min): 110
• Power Dissipation: 200mW
• Frequency (max): 100MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SC-70
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
BC847_BC547_SER_7
Product data sheet
Fig 5.
Fig 7.
V
(mV)
CEsat
h
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
FE
600
500
400
300
200
100
10
10
10
10
0
10
10
4
3
2
V
Selection B: DC current gain as a function of
collector current; typical values
I
Selection B: Collector-emitter saturation
voltage as a function of collector current;
typical values
C
CE
amb
amb
amb
amb
amb
amb
1
1
/I
B
= 5 V
= 20
= 150 C
= 25 C
= 55 C
= 150 C
= 25 C
= 55 C
1
1
(1)
(3)
(2)
10
10
(1)
(2)
(3)
10
10
2
2
I
I
C
C
(mA)
(mA)
mgt727
mgt729
Rev. 07 — 10 December 2008
10
10
3
3
Fig 6.
Fig 8.
V
(mV)
(mV)
V
BEsat
BE
1200
1000
(1) T
(2) T
(3) T
1200
1000
(1) T
(2) T
(3) T
45 V, 100 mA NPN general-purpose transistors
800
600
400
200
800
600
400
200
0
0
10
10
V
Selection B: Base-emitter voltage as a
function of collector current; typical values
I
Selection B: Base-emitter saturation voltage
as a function of collector current; typical
values
C
amb
amb
amb
amb
amb
amb
CE
1
/I
2
B
BC847/BC547 series
= 5 V
= 10
= 55 C
= 25 C
= 150 C
= 55 C
= 25 C
= 150 C
10
1
1
(1)
(2)
(3)
1
(1)
(2)
(3)
10
10
10
© NXP B.V. 2008. All rights reserved.
2
10
I
C
2
I
C
(mA)
mgt730
mgt728
(mA)
10
10
3
3
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