BLS2731-110 NXP Semiconductors, BLS2731-110 Datasheet - Page 5

• Manufacturer Part Number: BLS2731-110
• Manufacturer: NXP Semiconductors

Specifications of BLS2731-110

• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 75V
• Collector-base Voltage: 75V
• Emitter-base Voltage: 2V
• Dc Current Gain (min): 40
• Power Dissipation: 500W
• Operating Temp Range: -65C to 200C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-423A
• Lead Free Status / Rohs Status: Compliant

Philips Semiconductors
2001 Dec 05
handbook, full pagewidth
Microwave power transistor
Dimensions in mm.
The components are located on one side of the copper-clad printed-circuit board, the other side is unetched and serves as a ground plane.
Earth connections from the component side to the ground plane are made by through metallization.
input
L6
Fig.6 Component layout for 2.7 to 3.1 GHz class-C test circuit.
L5
L4
30
L3
L2
L1
5
L7
L8
L9
L12
L10
30
L11
L13
C2
C1
L14
MGM540
RC
BLS2731-110
output
40
Product specification