MTB33N10E ON Semiconductor, MTB33N10E Datasheet - Page 6

• Manufacturer Part Number: MTB33N10E
• Manufacturer: ON Semiconductor
• Type: Power MOSFETr

Specifications of MTB33N10E

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.06Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 33A
• Power Dissipation: 2.5W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: D2PAK
• Dc: 0106
• Lead Free Status / Rohs Status: Not Compliant

1000
0.01
100
1.0
0.1
10
0.1
0.01
Figure 14. Diode Reverse Recovery Waveform
1.0
0.1
1.0E−05
Figure 11. Maximum Rated Forward Biased
V
SINGLE PULSE
T
C
GS
I
S
= 25°C
D = 0.5
= 20 V
0.2
0.1
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
t
p
Safe Operating Area
R
THERMAL LIMIT
PACKAGE LIMIT
1.0
DS(on)
1.0E−04
di/dt
LIMIT
t
a
0.02
100 μs
SINGLE PULSE
t
0.01
rr
0.05
t
b
I
S
1 ms
0.25 I
10
10 ms
S
1.0E−03
SAFE OPERATING AREA
dc
Figure 13. Thermal Response
http://onsemi.com
TIME
100
t, TIME (ms)
6
1.0E−02
P
550
500
450
400
350
300
250
200
150
100
3.0
2.5
2.0
1.5
1.0
0.5
50
(pk)
0
0
25
25
DUTY CYCLE, D = t
Figure 12. Maximum Avalanche Energy versus
t
1
Figure 15. D
t
2
T
J
Starting Junction Temperature
R
Board material = 0.065 mil FR−4
Mounted on the minimum recommended footprint
Collector/Drain Pad Size ≈ 450 mils x 350 mils
, STARTING JUNCTION TEMPERATURE (°C)
50
50
1.0E−01
θJA
T
= 50°C/W
A
, AMBIENT TEMPERATURE (°C)
1
/t
2
2
PAK Power Derating Curve
75
75
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
J(pk)
θJC
(t) = r(t) R
− T
C
1.0E+00
100
= P
100
(pk)
θJC
1
R
θJC
(t)
I
D
125
125
= 33 A
1.0E+01
150
150