GVT72256A16TS-12 Cypress Semiconductor Corp, GVT72256A16TS-12 Datasheet
GVT72256A16TS-12
Specifications of GVT72256A16TS-12
Related parts for GVT72256A16TS-12
GVT72256A16TS-12 Summary of contents
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... SUPPLY REVOLUTIONARY PINOUT GENERAL DESCRIPTIO N The GVT72256A16 is organized as a 262,144 x 16 SRAM using a four-transistor memory cell with a high performance, silicon gate, low-power CMOS process. Galvantech SRAMs are fabricated using double-layer polysilicon, double-layer metal technology. This device offers center power and ground pins for improved performance and noise immunity ...
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GALVANTECH FUNCTIONAL BLOCK DIAGRAM VCC VSS A0 A17 July 22, 199 9 Rev. 7/99 , REVOLUTIONARY PINOUT 256K X 16 MEMORY ARRAY 512 ROWS X 512 X 16 COLUMNS POWER COLUMN DECODER DOWN 2 GVT72256A16 BLE# DQ1 DQ8 DQ9 DQ16 ...
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... A0-A17 20, 21, 22, 23, 24, 25, 26, 27, 42, 43 WE# 6 CE# 39, 40 BLE#, BHE# 41 OE# Input/Output SRAM Data I/O: Data inputs and data outputs. Lower byte is DQ1-DQ8 and upper byte 10, 13, 14, DQ1-DQ16 15, 16, 29, 30, 31, 32, 35, 36, 37, 38 11, 33 VCC Supply 12, 34 VSS Supply July 22, 199 9 Rev ...
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GALVANTECH ABSOLUTE MAXIMUM RATINGS * Voltage on VCC Supply Relative to VSS........-0.5V to +7.0V V ..........................................................-0.5V to VCC+0.5V IN Storage Temperature (plastic) ..........................-55 Junction Temperature .....................................................+125 Power Dissipation ...........................................................1.2W Short Circuit Output Current .......................................50mA DC ELECTRICAL CHARACTERISTICS AND RECOMMENDED OPERATING ...
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GALVANTECH AC ELECTRICAL CHARACTERISTICS (Note 5) (All Temperature Ranges; VCC = 5V DESCRIPTIO N READ Cycl e READ cycle time Address access time Chip Enable access time Output hold from address chang e Chip Enable to output in Low-Z Chip ...
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GALVANTECH AC TEST CONDITIONS Input pulse levels Input rise and fall times Input timing reference levels Output reference levels Output load NOTES 1. All voltages referenced to VSS (GND). 2. Overshoot: V +7.0V for Undershoot: V -2.0V ...
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GALVANTECH LOW VCC DATA RETENTION WAVEFOR M VCC ADDR Q PREVIOUS DATA VALID CE# BLE# BHE# OE# Q July 22, 199 9 Rev. 7/99 , REVOLUTIONARY PINOUT 256K X 16 DATA RETENTION MODE 4.5V 4.5V ...
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GALVANTECH (Write Enable Controlled with Output Enable OE# active LOW) ) ADDR CE# BLE# BHE# WE (Write Enable Controlled with Output Enable OE# inactive HIGH ) ADDR CE# BLE# BHE# WE July 22, 199 9 Rev. ...
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GALVANTECH ADDR CE# BLE# BHE# WE ADDR BLE# BHE# CE# WE July 22, 199 9 Rev. 7/99 , REVOLUTIONARY PINOUT 256K X 16 (12, 13) WRITE CYCLE NO. 3 (Chip Enable Controlled ) ...
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GALVANTECH Package Dimension s 44-pin 400 Mil Plastic SOJ (J) .405 (10.29) .395 (10.03) PIN #1 INDEX SEATING PLANE Note: All dimensions in inches (millimeters) 44-pin 400 Mil Plastic TSOP (TS) .402 (10.21) .398 (10.11) PIN #1 INDEX SEATING PLANE ...
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GALVANTECH Ordering Information GVT 72256A16 Galvantech Prefix Part Number July 22, 199 9 Rev. 7/99 , REVOLUTIONARY PINOUT 256K Galvantech, Inc. reserves the right to change products or specifications without notice GVT72256A16 ...