HMMC-5023 Avago Technologies US Inc., HMMC-5023 Datasheet - Page 3

• Manufacturer Part Number: HMMC-5023
• Manufacturer: Avago Technologies US Inc.
• Type: General Purposer

Specifications of HMMC-5023

• Number Of Channels: 1
• Frequency (max): 26.5GHz
• Output Power: 14@26500MHzdBm
• Power Supply Requirement: Single
• Single Supply Voltage (min): 3V
• Single Supply Voltage (typ): 5V
• Single Supply Voltage (max): 7V
• Dual Supply Voltage (min): Not RequiredV
• Dual Supply Voltage (typ): Not RequiredV
• Dual Supply Voltage (max): Not RequiredV
• Supply Current: 30@5VmA
• Operating Temperature Classification: Military
• Operating Temp Range: -55C to 140C
• Lead Free Status / Rohs Status: Compliant

3
Applications
The HMMC-5023 low noise
amplifier (LNA) is designed for
use in digital radio communica-
tion systems that operate within
the 21.2 GHz to 23.6 GHz and
24.5 to 26.5 GHz frequency
bands. High gain and low noise
temperature make it ideally
suited as a front-end gain stage.
The MMIC solution is a cost
effective alternative to hybrid
assemblies.
Biasing and Operation
The HMMC-5023 has four cas-
caded gain stages as shown in
Figure 1. The first two gain
stages at the input are biased
with the V
Similarly the two output stages
are biased with the V
Standard LNA operation is with
a single positive DC drain supply
voltage (V
assembly diagram shown in
Figure 8(a). If desired, the output
stage DC supply voltage (V
be increased to improve output
Figure 1. HMMC-5023 Simplified Schematic Diagram.
IN
92 Ω
D1
D1
= V
V
drain supply.
G1
D2
= 5 V) using the
INPUT STAGE
D2
supply.
D2
) can
V
D1
power capability while maintain-
ing optimum low noise bias
conditions for the input section.
The output power may also be
adjusted by applying a positive
voltage at V
ing bias point for both output
FETs. Increasing the voltage
applied to V
results in a more negative gate-
to-source voltage and, therefore,
lower drain current. Figures 8(b)
and 8(c) illustrate how the device
can be assembled for both
independent drain supply
operation and for output-stage
gate bias control. No ground
wires are required since ground
connections are made with
plated through-holes to the
backside of the device.
Assembly Techniques
It is recommended that the RF
input and RF output connections
be made using either 500 line/
inch (or equivalent) gold wire
mesh, or dual 0.7 mil diameter
gold wire. The RF wires should
92 Ω
V
G2
G2
G2
to alter the operat-
(more positively)
OUTPUT STAGE
V
D2
be kept as short as possible to
minimize inductance. The bias
supply wire can be a 0.7 mil
diameter gold wire attached to
either of the V
GaAs MMICs are ESD sensitive.
ESD preventive measures must
be employed in all aspects of
storage, handling, and assembly.
MMIC ESD precautions, handling
considerations, die attach and
bonding methods are critical
factors in successful GaAs MMIC
performance and reliability.
Avago application note #54,
“GaAs MMIC ESD, Die Attach
and Bonding Guidelines” pro-
vides basic information on these
subjects.
Additional References:
AN# 7, “HMMC-5023 32 GHz
Noise Figure Measurements,”
AN# 11, “HMMC-5023 as a
Doubler to 24 and 28 GHz,” and
AN# 13, “HMMC-5023 Configured
as a Gain Control Device at 24
and 28 GHz.”
OUT
DD
bonding pads.